TN2510N8-G
- Mfr.Part #
- TN2510N8-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 730MA TO243AA
- Stock
- 401
- In Stock :
- 401
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Polarity :
- N-Channel
- Product Type :
- MOSFET
- FET Feature :
- -
- Qualification :
- -
- Weight :
- 52.786812mg
- Base Product Number :
- TN2510
- Case Connection :
- DRAIN
- Continuous Drain Current Id :
- 730
- Mounting Type :
- Surface Mount
- Additional Feature :
- LOGIC LEVEL COMPATIBLE, LOW THRESHOLD
- Number of Elements :
- 1
- Vgs (Max) :
- ±20V
- Configuration :
- Single
- Power Dissipation (Max) :
- 1.6W (Ta)
- Drain to Source Breakdown Voltage :
- 100V
- Number of Pins :
- 4
- Product Category :
- MOSFET
- Pulsed Drain Current-Max (IDM) :
- 5A
- Continuous Drain Current (ID) :
- 730mA
- Height :
- 1.6mm
- Mount :
- Surface Mount
- Power Dissipation :
- 1.6W
- Product Status :
- Active
- Rise Time :
- 10ns
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Drive Voltage (Max Rds On,Min Rds On) :
- 3V 10V
- Fall Time (Typ) :
- 10 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Series :
- -
- Gate to Source Voltage (Vgs) :
- 20V
- Package / Case :
- TO-243AA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Turn On Delay Time :
- 10 ns
- Drain-source On Resistance-Max :
- 2Ohm
- Drain to Source Voltage (Vdss) :
- 100 V
- Width :
- 2.6mm
- Factory Lead Time :
- 14 Weeks
- Maximum Operating Temperature :
- + 150 C
- Terminal Form :
- Flat
- Turn-Off Delay Time :
- 20 ns
- Element Configuration :
- Single
- Transistor Type :
- 1 N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 730mA Tj
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- Number of Channels :
- 1
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Mounting Style :
- SMD/SMT
- Input Capacitance (Ciss) (Max) @ Vds :
- 125pF @ 25V
- Packaging :
- Tape and Reel (TR)
- Brand :
- Microchip Technology / Atmel
- Rds On (Max) @ Id, Vgs :
- 1.5 Ω @ 750mA, 10V
- Operating Temperature :
- -55°C~150°C TJ
- Length :
- 4.6mm
- Supplier Device Package :
- TO-243AA (SOT-89)
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Drain Current-Max (Abs) (ID) :
- 0.73A
- Channel Type :
- N
- Published :
- 2008
- Contact Plating :
- Tin
- Power Dissipation-Max :
- 1.6W Ta
- Channel Mode :
- Enhancement
- RoHS :
- Details
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- R-PSSO-F3
- Type :
- FET
- FET Type :
- N-Channel
- MSL :
- -
- Product :
- MOSFET Small Signal
- Minimum Operating Temperature :
- - 55 C
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Manufacturer :
- Microchip
- Datasheets
- TN2510N8-G

N-Channel Tape & Reel (TR) 1.5 Ω @ 750mA, 10V ±20V 125pF @ 25V 100 V TO-243AA
TN2510N8-G Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 125pF @ 25V.This device conducts a continuous drain current (ID) of 730mA, which is the maximum continuous current transistor can conduct.Using VGS=100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 100V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 0.73A.When the device is turned off, a turn-off delay time of 20 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 5A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 10 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 100 V.In order to reduce power consumption, this device uses a drive voltage of 3V 10V volts (3V 10V).
TN2510N8-G Features
a continuous drain current (ID) of 730mA
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 5A.
a 100 V drain to source voltage (Vdss)
TN2510N8-G Applications
There are a lot of Microchip Technology
TN2510N8-G applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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