TN2510N8-G

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Mfr.Part #
TN2510N8-G
Manufacturer
Microchip Technology
Package / Case
TO-243AA
Datasheet
Download
Description
MOSFET N-CH 100V 730MA TO243AA
Stock
401
In Stock :
401

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Polarity :
N-Channel
Product Type :
MOSFET
FET Feature :
-
Qualification :
-
Weight :
52.786812mg
Base Product Number :
TN2510
Case Connection :
DRAIN
Continuous Drain Current Id :
730
Mounting Type :
Surface Mount
Additional Feature :
LOGIC LEVEL COMPATIBLE, LOW THRESHOLD
Number of Elements :
1
Vgs (Max) :
±20V
Configuration :
Single
Power Dissipation (Max) :
1.6W (Ta)
Drain to Source Breakdown Voltage :
100V
Number of Pins :
4
Product Category :
MOSFET
Pulsed Drain Current-Max (IDM) :
5A
Continuous Drain Current (ID) :
730mA
Height :
1.6mm
Mount :
Surface Mount
Power Dissipation :
1.6W
Product Status :
Active
Rise Time :
10ns
Vgs(th) (Max) @ Id :
2V @ 1mA
Drive Voltage (Max Rds On,Min Rds On) :
3V 10V
Fall Time (Typ) :
10 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Application :
SWITCHING
Series :
-
Gate to Source Voltage (Vgs) :
20V
Package / Case :
TO-243AA
Time@Peak Reflow Temperature-Max (s) :
40
Turn On Delay Time :
10 ns
Drain-source On Resistance-Max :
2Ohm
Drain to Source Voltage (Vdss) :
100 V
Width :
2.6mm
Factory Lead Time :
14 Weeks
Maximum Operating Temperature :
+ 150 C
Terminal Form :
Flat
Turn-Off Delay Time :
20 ns
Element Configuration :
Single
Transistor Type :
1 N-Channel
Current - Continuous Drain (Id) @ 25°C :
730mA Tj
Operating Mode :
ENHANCEMENT MODE
RoHS Status :
ROHS3 Compliant
Number of Channels :
1
ECCN Code :
EAR99
Radiation Hardening :
No
Mounting Style :
SMD/SMT
Input Capacitance (Ciss) (Max) @ Vds :
125pF @ 25V
Packaging :
Tape and Reel (TR)
Brand :
Microchip Technology / Atmel
Rds On (Max) @ Id, Vgs :
1.5 Ω @ 750mA, 10V
Operating Temperature :
-55°C~150°C TJ
Length :
4.6mm
Supplier Device Package :
TO-243AA (SOT-89)
JESD-609 Code :
e3
Lead Free :
Lead Free
Drain Current-Max (Abs) (ID) :
0.73A
Channel Type :
N
Published :
2008
Contact Plating :
Tin
Power Dissipation-Max :
1.6W Ta
Channel Mode :
Enhancement
RoHS :
Details
Number of Terminations :
3
Peak Reflow Temperature (Cel) :
260
Transistor Element Material :
SILICON
JESD-30 Code :
R-PSSO-F3
Type :
FET
FET Type :
N-Channel
MSL :
-
Product :
MOSFET Small Signal
Minimum Operating Temperature :
- 55 C
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Manufacturer :
Microchip
Datasheets
TN2510N8-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TN2510N8-G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Pins:4, Package / Case:TO-243AA, Number of Channels:1, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Type:FET, TN2510N8-G pinout, TN2510N8-G datasheet PDF, TN2510N8-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TN2510N8-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TN2510N8-G


N-Channel Tape & Reel (TR) 1.5 Ω @ 750mA, 10V ±20V 125pF @ 25V 100 V TO-243AA

TN2510N8-G Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 125pF @ 25V.This device conducts a continuous drain current (ID) of 730mA, which is the maximum continuous current transistor can conduct.Using VGS=100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 100V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 0.73A.When the device is turned off, a turn-off delay time of 20 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 5A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 10 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 100 V.In order to reduce power consumption, this device uses a drive voltage of 3V 10V volts (3V 10V).

TN2510N8-G Features


a continuous drain current (ID) of 730mA
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 5A.
a 100 V drain to source voltage (Vdss)


TN2510N8-G Applications


There are a lot of Microchip Technology
TN2510N8-G applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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