TN2435N8-G

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Mfr.Part #
TN2435N8-G
Manufacturer
Microchip Technology
Package / Case
TO-243AA
Datasheet
Download
Description
MOSFET N-CH 350V 365MA TO243AA
Stock
8,675
In Stock :
8,675

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Resistance :
10Ohm
Product :
MOSFET Small Signal
Number of Elements :
1
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Case Connection :
DRAIN
Package / Case :
TO-243AA
Drain Current-Max (Abs) (ID) :
0.365A
Rds On (Max) @ Id, Vgs :
6 Ω @ 750mA, 10V
Channel Type :
N
Mounting Style :
SMD/SMT
Additional Feature :
LOGIC LEVEL COMPATIBLE
Turn On Delay Time :
5 ns
Number of Pins :
4
Transistor Element Material :
SILICON
Subcategory :
MOSFETs
Power Dissipation-Max :
1.6W Ta
Element Configuration :
Single
Vgs (Max) :
±20V
Fall Time (Typ) :
10 ns
Power Dissipation (Max) :
1.6W (Ta)
Transistor Type :
1 N-Channel
Terminal Finish :
Matte Tin (Sn)
Continuous Drain Current (ID) :
365mA
Peak Reflow Temperature (Cel) :
260
RoHS :
Details
Height :
1.6mm
Brand :
Microchip Technology
Mounting Type :
Surface Mount
Transistor Polarity :
N-Channel
Supplier Device Package :
TO-243AA (SOT-89)
Length :
4.6mm
Published :
2009
Number of Terminations :
3
Packaging :
Tape and Reel (TR)
JESD-609 Code :
e3
Factory Lead Time :
6 Weeks
Vgs(th) (Max) @ Id :
2.5V @ 1mA
Product Category :
MOSFET
Terminal Form :
Flat
Number of Channels :
1
Continuous Drain Current Id :
365
Operating Temperature :
-55°C~150°C TJ
Operating Mode :
ENHANCEMENT MODE
Weight :
52.786812mg
Drain to Source Breakdown Voltage :
350V
RoHS Status :
ROHS3 Compliant
Input Capacitance (Ciss) (Max) @ Vds :
200pF @ 25V
ECCN Code :
EAR99
Qualification Status :
Not Qualified
Product Type :
MOSFET
Turn-Off Delay Time :
28 ns
Channel Mode :
Enhancement
Base Product Number :
TN2435
Transistor Application :
SWITCHING
Minimum Operating Temperature :
- 55 C
Mount :
Surface Mount
Configuration :
Single
Manufacturer :
Microchip
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Feature :
--
FET Type :
N-Channel
Time@Peak Reflow Temperature-Max (s) :
40
Power Dissipation :
1.6W
Width :
2.6mm
Series :
--
Gate to Source Voltage (Vgs) :
20V
JESD-30 Code :
R-PSSO-F3
Maximum Operating Temperature :
+ 150 C
Drain to Source Voltage (Vdss) :
350V
Drive Voltage (Max Rds On,Min Rds On) :
3V 10V
Type :
FET
Current - Continuous Drain (Id) @ 25°C :
365mA Tj
Product Status :
Active
Rise Time :
10ns
Datasheets
TN2435N8-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TN2435N8-G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-243AA, Number of Pins:4, Mounting Type:Surface Mount, Number of Terminations:3, Number of Channels:1, Operating Temperature:-55°C~150°C TJ, Type:FET, TN2435N8-G pinout, TN2435N8-G datasheet PDF, TN2435N8-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TN2435N8-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TN2435N8-G


N-Channel Tape & Reel (TR) 6 Ω @ 750mA, 10V ±20V 200pF @ 25V 350V TO-243AA

TN2435N8-G Overview


A device's maximal input capacitance is 200pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 365mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 350V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 0.365A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 28 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 350V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (3V 10V).

TN2435N8-G Features


a continuous drain current (ID) of 365mA
a drain-to-source breakdown voltage of 350V voltage
the turn-off delay time is 28 ns
a 350V drain to source voltage (Vdss)


TN2435N8-G Applications


There are a lot of Microchip Technology
TN2435N8-G applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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