TN2404K-T1-GE3
- Mfr.Part #
- TN2404K-T1-GE3
- Manufacturer
- Vishay
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 240V 200MA SOT23-3
- Stock
- 78,191
- In Stock :
- 78,191
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Weight :
- 1.437803g
- Terminal Position :
- Dual
- Turn On Delay Time :
- 5 ns
- Fall Time (Typ) :
- 16 ns
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Drain Current-Max (Abs) (ID) :
- 0.2A
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Nominal Vgs :
- 800 mV
- Gate Charge (Qg) (Max) @ Vgs :
- 8nC @ 10V
- Rise Time :
- 12ns
- Threshold Voltage :
- 800mV
- JESD-609 Code :
- e3
- Turn-Off Delay Time :
- 35 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 10V
- Number of Channels :
- 1
- Packaging :
- Tape and Reel (TR)
- Rds On (Max) @ Id, Vgs :
- 4 Ω @ 300mA, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 200mA Ta
- Power Dissipation-Max :
- 360mW Ta
- ECCN Code :
- EAR99
- Published :
- 2013
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Contact Plating :
- Tin
- Power Dissipation :
- 360mW
- REACH SVHC :
- Unknown
- Factory Lead Time :
- 14 Weeks
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Peak Reflow Temperature (Cel) :
- 260
- Drain to Source Breakdown Voltage :
- 240V
- Number of Terminations :
- 3
- Continuous Drain Current (ID) :
- 200mA
- Vgs (Max) :
- ±20V
- Drain-source On Resistance-Max :
- 4Ohm
- Datasheets
- TN2404K-T1-GE3

N-Channel Tape & Reel (TR) 4 Ω @ 300mA, 10V ±20V 8nC @ 10V TO-236-3, SC-59, SOT-23-3
TN2404K-T1-GE3 Overview
Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 200mA amps.In this device, the drain-source breakdown voltage is 240V and VGS=240V, so the drain-source breakdown voltage is 240V in this case.A device can conduct a maximum continuous current of [0.2A] according to its drain current.It is [35 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 5 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 800mV.A device like this reduces its overall power consumption when it uses drive voltage (2.5V 10V).
TN2404K-T1-GE3 Features
a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of 240V voltage
the turn-off delay time is 35 ns
a threshold voltage of 800mV
TN2404K-T1-GE3 Applications
There are a lot of Vishay Siliconix
TN2404K-T1-GE3 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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