TN2404K-T1-GE3
- Mfr.Part #
- TN2404K-T1-GE3
- Manufacturer
- Vishay
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 240V 200MA SOT23-3
- Stock
- 78,191
- In Stock :
- 78,191
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Form :
- Gull wing
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 14 Weeks
- Rds On (Max) @ Id, Vgs :
- 4 Ω @ 300mA, 10V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Fall Time (Typ) :
- 16 ns
- Peak Reflow Temperature (Cel) :
- 260
- Operating Mode :
- ENHANCEMENT MODE
- Drain-source On Resistance-Max :
- 4Ohm
- Vgs (Max) :
- ±20V
- Power Dissipation-Max :
- 360mW Ta
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Turn-Off Delay Time :
- 35 ns
- Number of Channels :
- 1
- Drain to Source Breakdown Voltage :
- 240V
- Contact Plating :
- Tin
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 10V
- Weight :
- 1.437803g
- Gate to Source Voltage (Vgs) :
- 20V
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Published :
- 2013
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 360mW
- Continuous Drain Current (ID) :
- 200mA
- REACH SVHC :
- Unknown
- Mounting Type :
- Surface Mount
- Rise Time :
- 12ns
- Nominal Vgs :
- 800 mV
- Current - Continuous Drain (Id) @ 25°C :
- 200mA Ta
- Turn On Delay Time :
- 5 ns
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Threshold Voltage :
- 800mV
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Gate Charge (Qg) (Max) @ Vgs :
- 8nC @ 10V
- Drain Current-Max (Abs) (ID) :
- 0.2A
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Datasheets
- TN2404K-T1-GE3

N-Channel Tape & Reel (TR) 4 Ω @ 300mA, 10V ±20V 8nC @ 10V TO-236-3, SC-59, SOT-23-3
TN2404K-T1-GE3 Overview
Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 200mA amps.In this device, the drain-source breakdown voltage is 240V and VGS=240V, so the drain-source breakdown voltage is 240V in this case.A device can conduct a maximum continuous current of [0.2A] according to its drain current.It is [35 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 5 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 800mV.A device like this reduces its overall power consumption when it uses drive voltage (2.5V 10V).
TN2404K-T1-GE3 Features
a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of 240V voltage
the turn-off delay time is 35 ns
a threshold voltage of 800mV
TN2404K-T1-GE3 Applications
There are a lot of Vishay Siliconix
TN2404K-T1-GE3 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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