TN2404K-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

2V @ 250μA

Time@Peak Reflow Temperature-Max (s) :

30

Fall Time (Typ) :

16 ns

ECCN Code :

EAR99

Turn On Delay Time :

5 ns

Mount :

Surface Mount

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

200mA Ta

Power Dissipation-Max :

360mW Ta

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

4 Ω @ 300mA, 10V

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Number of Channels :

1

Drain to Source Breakdown Voltage :

240V

JESD-609 Code :

e3

REACH SVHC :

Unknown

Rise Time :

12ns

Package / Case :

TO-236-3, SC-59, SOT-23-3

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 10V

Drain Current-Max (Abs) (ID) :

0.2A

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Weight :

1.437803g

Terminal Form :

Gull wing

Contact Plating :

Tin

FET Type :

N-Channel

Factory Lead Time :

14 Weeks

Published :

2013

Number of Elements :

1

Threshold Voltage :

800mV

Continuous Drain Current (ID) :

200mA

Nominal Vgs :

800 mV

Vgs (Max) :

±20V

Lead Free :

Lead Free

Turn-Off Delay Time :

35 ns

Element Configuration :

Single

Drain-source On Resistance-Max :

4Ohm

Power Dissipation :

360mW

Number of Pins :

3

Gate to Source Voltage (Vgs) :

20V