TN2404K-T1-GE3

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Mfr.Part #
TN2404K-T1-GE3
Manufacturer
Vishay
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
MOSFET N-CH 240V 200MA SOT23-3
Stock
78,191
In Stock :
78,191

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Form :
Gull wing
Transistor Application :
SWITCHING
Transistor Element Material :
SILICON
Factory Lead Time :
14 Weeks
Rds On (Max) @ Id, Vgs :
4 Ω @ 300mA, 10V
Time@Peak Reflow Temperature-Max (s) :
30
Fall Time (Typ) :
16 ns
Peak Reflow Temperature (Cel) :
260
Operating Mode :
ENHANCEMENT MODE
Drain-source On Resistance-Max :
4Ohm
Vgs (Max) :
±20V
Power Dissipation-Max :
360mW Ta
Packaging :
Tape and Reel (TR)
ECCN Code :
EAR99
Turn-Off Delay Time :
35 ns
Number of Channels :
1
Drain to Source Breakdown Voltage :
240V
Contact Plating :
Tin
Drive Voltage (Max Rds On,Min Rds On) :
2.5V 10V
Weight :
1.437803g
Gate to Source Voltage (Vgs) :
20V
Lead Free :
Lead Free
Vgs(th) (Max) @ Id :
2V @ 250μA
RoHS Status :
ROHS3 Compliant
Number of Pins :
3
Published :
2013
Operating Temperature :
-55°C~150°C TJ
Power Dissipation :
360mW
Continuous Drain Current (ID) :
200mA
REACH SVHC :
Unknown
Mounting Type :
Surface Mount
Rise Time :
12ns
Nominal Vgs :
800 mV
Current - Continuous Drain (Id) @ 25°C :
200mA Ta
Turn On Delay Time :
5 ns
Package / Case :
TO-236-3, SC-59, SOT-23-3
Threshold Voltage :
800mV
Mount :
Surface Mount
Number of Elements :
1
Terminal Position :
Dual
Gate Charge (Qg) (Max) @ Vgs :
8nC @ 10V
Drain Current-Max (Abs) (ID) :
0.2A
Element Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Type :
N-Channel
JESD-609 Code :
e3
Number of Terminations :
3
Datasheets
TN2404K-T1-GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay TN2404K-T1-GE3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Package / Case:TO-236-3, SC-59, SOT-23-3, Number of Terminations:3, TN2404K-T1-GE3 pinout, TN2404K-T1-GE3 datasheet PDF, TN2404K-T1-GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay TN2404K-T1-GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay TN2404K-T1-GE3


N-Channel Tape & Reel (TR) 4 Ω @ 300mA, 10V ±20V 8nC @ 10V TO-236-3, SC-59, SOT-23-3

TN2404K-T1-GE3 Overview


Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 200mA amps.In this device, the drain-source breakdown voltage is 240V and VGS=240V, so the drain-source breakdown voltage is 240V in this case.A device can conduct a maximum continuous current of [0.2A] according to its drain current.It is [35 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 5 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 800mV.A device like this reduces its overall power consumption when it uses drive voltage (2.5V 10V).

TN2404K-T1-GE3 Features


a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of 240V voltage
the turn-off delay time is 35 ns
a threshold voltage of 800mV


TN2404K-T1-GE3 Applications


There are a lot of Vishay Siliconix
TN2404K-T1-GE3 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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