TK9A55DA(STA4,Q,M)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2010

Packaging :

Tube

Min Operating Temperature :

-55°C

Max Operating Temperature :

150°C

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance :

1.05nF

Vgs (Max) :

±30V

Continuous Drain Current (ID) :

8.5A

Vgs(th) (Max) @ Id :

4V @ 1mA

Series :

π-MOSVII

Package / Case :

TO-220-3 Full Pack

Rds On (Max) @ Id, Vgs :

860mOhm @ 4.3A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

550V

Rds On Max :

860 mΩ

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Supplier Device Package :

TO-220SIS

Factory Lead Time :

16 Weeks

Power Dissipation-Max :

40W Tc

Input Capacitance (Ciss) (Max) @ Vds :

1050pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

8.5A Ta

Operating Temperature :

150°C TJ

Mount :

Through Hole

Radiation Hardening :

No

Rise Time :

25ns

Number of Pins :

3

Fall Time (Typ) :

10 ns

RoHS Status :

RoHS Compliant

Gate to Source Voltage (Vgs) :

30V