TK9A45D(STA4,Q,M)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

RoHS Compliant

Rise Time :

20ns

Continuous Drain Current (ID) :

9A

Vgs (Max) :

±30V

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 10V

Packaging :

Tube

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

9A Ta

Operating Temperature :

150°C TJ

Drain to Source Voltage (Vdss) :

450V

Rds On (Max) @ Id, Vgs :

770mOhm @ 4.5A, 10V

Published :

2010

Mounting Type :

Through Hole

Package / Case :

TO-220-3 Full Pack

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

30V

Input Capacitance :

800pF

Power Dissipation-Max :

40W Tc

Rds On Max :

770 mΩ

Input Capacitance (Ciss) (Max) @ Vds :

800pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

16 Weeks

Series :

π-MOSVII

Vgs(th) (Max) @ Id :

4V @ 1mA

Supplier Device Package :

TO-220SIS

Min Operating Temperature :

-55°C

Mount :

Through Hole

Fall Time (Typ) :

12 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Max Operating Temperature :

150°C