TK90S06N1L,LXHQ

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Base Product Number :

TK90S06

Vgs(th) (Max) @ Id :

2.5V @ 500μA

Drain to Source Voltage (Vdss) :

60 V

Number of Channels :

1 Channel

Rise Time :

11 ns

Vgs (Max) :

±20V

FET Feature :

-

Packaging :

Cut Tape

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

3.3mOhm @ 45A, 10V

Gate Charge (Qg) (Max) @ Vgs :

81 nC @ 10 V

Product Category :

MOSFET

Qualification :

AEC-Q101

Manufacturer :

Toshiba

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Subcategory :

MOSFETs

RoHS :

Details

Operating Temperature :

175°C

Product Type :

MOSFET

Brand :

Toshiba

Current - Continuous Drain (Id) @ 25°C :

90A (Ta)

Maximum Operating Temperature :

+ 175 C

Minimum Operating Temperature :

-

Series :

U-MOSVIII-H

FET Type :

N-Channel

Transistor Polarity :

N-Channel

Power Dissipation (Max) :

157W (Tc)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Channel Mode :

Enhancement

Package :

Digi-Reel?

Mounting Style :

SMD/SMT

Input Capacitance (Ciss) (Max) @ Vds :

5400 pF @ 10 V

Supplier Device Package :

DPAK+

Transistor Type :

1 N-Channel

Product Status :

Active