TK90S06N1L,LQ

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Mfr.Part #
TK90S06N1L,LQ
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 60V 90A TO252-3
Stock
31,637
In Stock :
31,637

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - FETs, MOSFETs - Single
Continuous Drain Current (ID) :
90A
Input Capacitance (Ciss) (Max) @ Vds :
5400pF @ 10V
Element Configuration :
Single
FET Type :
N-Channel
Vgs(th) (Max) @ Id :
2.5V @ 500μA
Gate to Source Voltage (Vgs) :
10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Voltage (Vdss) :
60V
Factory Lead Time :
12 Weeks
Series :
U-MOSVIII-H
Rds On (Max) @ Id, Vgs :
3.3m Ω @ 45A, 10V
Packaging :
Cut Tape (CT)
Number of Channels :
1
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation-Max :
157W Tc
Operating Temperature :
175°C TJ
Gate Charge (Qg) (Max) @ Vgs :
81nC @ 10V
Published :
2014
RoHS Status :
RoHS Compliant
Vgs (Max) :
±20V
Mount :
Surface Mount
Weight :
3.949996g
Current - Continuous Drain (Id) @ 25°C :
90A Ta
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Mounting Type :
Surface Mount
Datasheets
TK90S06N1L,LQ
Introducing Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK90S06N1L,LQ from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Operating Temperature:175°C TJ, Mounting Type:Surface Mount, TK90S06N1L,LQ pinout, TK90S06N1L,LQ datasheet PDF, TK90S06N1L,LQ amp .Beyond Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK90S06N1L,LQ ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation TK90S06N1L,LQ


N-Channel Cut Tape (CT) 3.3m Ω @ 45A, 10V ±20V 5400pF @ 10V 81nC @ 10V 60V TO-252-3, DPak (2 Leads + Tab), SC-63

TK90S06N1L,LQ Overview


A device's maximum input capacitance is 5400pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 90A for this device. Drain current refers to the capacity of the device to conduct continuous current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 10V.To operate this transistor, you need to apply a 60V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.

TK90S06N1L,LQ Features


a continuous drain current (ID) of 90A
a 60V drain to source voltage (Vdss)


TK90S06N1L,LQ Applications


There are a lot of Toshiba Semiconductor and Storage
TK90S06N1L,LQ applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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