TK7S10N1Z,LXHQ

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Polarity :

N-Channel

Drain to Source Voltage (Vdss) :

100 V

FET Feature :

-

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

7A (Ta)

Manufacturer :

Toshiba

Drive Voltage (Max Rds On, Min Rds On) :

10V

Power Dissipation (Max) :

50W (Tc)

Subcategory :

MOSFETs

Base Product Number :

TK7S10

Input Capacitance (Ciss) (Max) @ Vds :

470 pF @ 10 V

RoHS :

Details

Transistor Type :

1 N-Channel

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Qualification :

AEC-Q101

Channel Mode :

Enhancement

Product Status :

Active

Mounting Style :

SMD/SMT

Minimum Operating Temperature :

- 55 C

Number of Channels :

1 Channel

Series :

U-MOSVIII-H

Brand :

Toshiba

Product Category :

MOSFET

FET Type :

N-Channel

Rise Time :

4.6 ns

Operating Temperature :

175°C

Product Type :

MOSFET

Rds On (Max) @ Id, Vgs :

48mOhm @ 3.5A, 10V

Packaging :

MouseReel

Package :

Digi-Reel?

Gate Charge (Qg) (Max) @ Vgs :

7.1 nC @ 10 V

Vgs(th) (Max) @ Id :

4V @ 100µA

Maximum Operating Temperature :

+ 175 C

Vgs (Max) :

±20V

Supplier Device Package :

DPAK+