TK7S10N1Z,LQ

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Mfr.Part #
TK7S10N1Z,LQ
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 100V 7A DPAK
Stock
2
In Stock :
2

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - FETs, MOSFETs - Single
Gate to Source Voltage (Vgs) :
10V
Rds On (Max) @ Id, Vgs :
48m Ω @ 3.5A, 10V
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Element Configuration :
Single
Vgs (Max) :
±20V
Mounting Type :
Surface Mount
Published :
2015
Factory Lead Time :
12 Weeks
FET Type :
N-Channel
Drain to Source Voltage (Vdss) :
100V
Input Capacitance (Ciss) (Max) @ Vds :
470pF @ 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS Status :
RoHS Compliant
Packaging :
Cut Tape (CT)
Vgs(th) (Max) @ Id :
4V @ 100µA
Operating Temperature :
175°C TJ
Number of Channels :
1
Weight :
3.949996g
Power Dissipation-Max :
50W Tc
Series :
U-MOSVIII-H
Continuous Drain Current (ID) :
7A
Current - Continuous Drain (Id) @ 25°C :
7A Ta
Gate Charge (Qg) (Max) @ Vgs :
7.1nC @ 10V
Mount :
Surface Mount
Datasheets
TK7S10N1Z,LQ
Introducing Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK7S10N1Z,LQ from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type:Surface Mount, Operating Temperature:175°C TJ, Number of Channels:1, TK7S10N1Z,LQ pinout, TK7S10N1Z,LQ datasheet PDF, TK7S10N1Z,LQ amp .Beyond Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK7S10N1Z,LQ ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation TK7S10N1Z,LQ


N-Channel Cut Tape (CT) 48m Ω @ 3.5A, 10V ±20V 470pF @ 10V 7.1nC @ 10V 100V TO-252-3, DPak (2 Leads + Tab), SC-63

TK7S10N1Z,LQ Overview


A device's maximal input capacitance is 470pF @ 10V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 7A, which represents the maximum continuous current it can conduct.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 10V volts.This transistor requires a 100V drain to source voltage (Vdss).

TK7S10N1Z,LQ Features


a continuous drain current (ID) of 7A
a 100V drain to source voltage (Vdss)


TK7S10N1Z,LQ Applications


There are a lot of Toshiba Semiconductor and Storage
TK7S10N1Z,LQ applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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