TK72E12N1,S1X
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- Mfr.Part #
- TK72E12N1,S1X
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N CH 120V 72A TO-220
- Stock
- 44,407
- In Stock ：
- 44,407
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 33ns
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Drain to Source Breakdown Voltage :
- 120V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 8100pF @ 60V
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Temperature :
- 150°C TJ
- Published :
- 2014
- Packaging :
- Tube
- Vgs (Max) :
- ±20V
- Package / Case :
- TO-220-3
- Continuous Drain Current (ID) :
- 72A
- Mount :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 72A Ta
- Rds On (Max) @ Id, Vgs :
- 4.4m Ω @ 36A, 10V
- Factory Lead Time :
- 12 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 130nC @ 10V
- RoHS Status :
- RoHS Compliant
- Mounting Type :
- Through Hole
- Fall Time (Typ) :
- 37 ns
- Power Dissipation :
- 255W
- Series :
- U-MOSVIII-H
- Element Configuration :
- Single
- Power Dissipation-Max :
- 255W Tc
- Turn-Off Delay Time :
- 120 ns
- Datasheets
- TK72E12N1,S1X
N-Channel Tube 4.4m Ω @ 36A, 10V ±20V 8100pF @ 60V 130nC @ 10V TO-220-3
TK72E12N1,S1X Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 8100pF @ 60V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 72A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 120V, and this device has a drainage-to-source breakdown voltage of 120VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 120 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
TK72E12N1,S1X Features
a continuous drain current (ID) of 72A
a drain-to-source breakdown voltage of 120V voltage
the turn-off delay time is 120 ns
TK72E12N1,S1X Applications
There are a lot of Toshiba Semiconductor and Storage
TK72E12N1,S1X applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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