TK72A12N1,S4X
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- Mfr.Part #
- TK72A12N1,S4X
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 120V 72A TO220SIS
- Stock
- 8,220
- In Stock ：
- 8,220
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 72A
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- U-MOSVIII-H
- FET Type :
- N-Channel
- Turn-Off Delay Time :
- 120 ns
- Published :
- 2014
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 45W Tc
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- Packaging :
- Tube
- Factory Lead Time :
- 12 Weeks
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Rise Time :
- 33ns
- Mount :
- Through Hole
- Turn On Delay Time :
- 64 ns
- Number of Channels :
- 1
- Radiation Hardening :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 130nC @ 10V
- Vgs (Max) :
- ±20V
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 8100pF @ 60V
- Weight :
- 6.000006g
- Current - Continuous Drain (Id) @ 25°C :
- 72A Tc
- RoHS Status :
- RoHS Compliant
- Fall Time (Typ) :
- 37 ns
- Package / Case :
- TO-220-3 Full Pack
- Drain to Source Breakdown Voltage :
- 120V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 4.5m Ω @ 36A, 10V
- Datasheets
- TK72A12N1,S4X
N-Channel Tube 4.5m Ω @ 36A, 10V ±20V 8100pF @ 60V 130nC @ 10V TO-220-3 Full Pack
TK72A12N1,S4X Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 8100pF @ 60V.This device has a continuous drain current (ID) of [72A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=120V, the drain-source breakdown voltage is 120V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 120 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 64 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Its overall power consumption can be reduced by using drive voltage (10V).
TK72A12N1,S4X Features
a continuous drain current (ID) of 72A
a drain-to-source breakdown voltage of 120V voltage
the turn-off delay time is 120 ns
TK72A12N1,S4X Applications
There are a lot of Toshiba Semiconductor and Storage
TK72A12N1,S4X applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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