TK6P60W,RVQ

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

600V

Rds On (Max) @ Id, Vgs :

820m Ω @ 3.1A, 10V

Factory Lead Time :

16 Weeks

FET Feature :

Super Junction

RoHS Status :

RoHS Compliant

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

6.2A Ta

Gate to Source Voltage (Vgs) :

30V

Number of Elements :

1

Published :

2014

Mount :

Surface Mount

Turn-Off Delay Time :

55 ns

Power Dissipation :

60W

Series :

DTMOSIV

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

6.2A

Vgs(th) (Max) @ Id :

3.7V @ 310μA

Fall Time (Typ) :

7 ns

Power Dissipation-Max :

60W Tc

Number of Pins :

3

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Temperature :

150°C TJ

Rise Time :

18ns

Radiation Hardening :

No

Element Configuration :

Single

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

390pF @ 300V