TK6P53D(T6RSS-Q)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Operating Temperature :

150°C TJ

Series :

π-MOSVII

Gate to Source Voltage (Vgs) :

30V

RoHS Status :

RoHS Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

6A

Vgs(th) (Max) @ Id :

4.4V @ 1mA

Supplier Device Package :

D-Pak

Vgs (Max) :

±30V

Power Dissipation-Max :

100W Tc

Fall Time (Typ) :

8 ns

Min Operating Temperature :

-55°C

Number of Pins :

3

Published :

2010

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Drain to Source Voltage (Vdss) :

525V

Rds On Max :

1.3 Ω

Rds On (Max) @ Id, Vgs :

1.3Ohm @ 3A, 10V

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

600pF @ 25V

Input Capacitance :

600pF

Rise Time :

18ns

Current - Continuous Drain (Id) @ 25°C :

6A Ta

Factory Lead Time :

16 Weeks

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Max Operating Temperature :

150°C