TK62N60X,S1F

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2014

Continuous Drain Current (ID) :

61.8A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

150°C TJ

Rise Time :

40ns

Drain-source On Resistance-Max :

0.04Ohm

Pbfree Code :

yes

FET Type :

N-Channel

Factory Lead Time :

16 Weeks

Transistor Application :

SWITCHING

Element Configuration :

Single

Turn-Off Delay Time :

240 ns

Packaging :

Tube

Fall Time (Typ) :

10 ns

Current - Continuous Drain (Id) @ 25°C :

61.8A Ta

Mount :

Through Hole

Avalanche Energy Rating (Eas) :

698 mJ

Weight :

38.000013g

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

30V

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

6500pF @ 300V

JESD-30 Code :

R-PSFM-T3

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Number of Terminations :

3

Vgs(th) (Max) @ Id :

3.5V @ 3.1mA

FET Feature :

Super Junction

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-247-3

Rds On (Max) @ Id, Vgs :

40m Ω @ 21A, 10V

Reach Compliance Code :

Unknown

Drain to Source Breakdown Voltage :

600V

Series :

DTMOSIV-H

Power Dissipation-Max :

400W Tc

Transistor Element Material :

SILICON

RoHS Status :

RoHS Compliant

Gate Charge (Qg) (Max) @ Vgs :

135nC @ 10V

Number of Channels :

1

Pulsed Drain Current-Max (IDM) :

247A

Case Connection :

DRAIN

Vgs (Max) :

±30V

Turn On Delay Time :

90 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED