TK62J60W,S1VQ

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

310 ns

Vgs(th) (Max) @ Id :

3.7V @ 3.1mA

Drain to Source Breakdown Voltage :

600V

Rds On (Max) @ Id, Vgs :

38mOhm @ 30.9A, 10V

FET Feature :

Super Junction

Power Dissipation-Max :

400W Tc

Fall Time (Typ) :

15 ns

Operating Temperature :

150°C TJ

Package / Case :

TO-3P-3, SC-65-3

Drain to Source Resistance :

33mOhm

Published :

2014

Packaging :

Tube

Mounting Type :

Through Hole

Mount :

Through Hole

Element Configuration :

Single

Vgs (Max) :

±30V

Series :

DTMOSIV

Rise Time :

58ns

Rds On Max :

38 mΩ

RoHS Status :

RoHS Compliant

Max Operating Temperature :

150°C

Power Dissipation :

400W

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Min Operating Temperature :

-55°C

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

6500pF @ 300V

Gate to Source Voltage (Vgs) :

30V

Number of Elements :

1

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

61.8A Ta

Drain to Source Voltage (Vdss) :

600V

Radiation Hardening :

No

Continuous Drain Current (ID) :

61.8A

Supplier Device Package :

TO-3P(N)

Factory Lead Time :

16 Weeks

Input Capacitance :

6.5nF