TK58E06N1,S1X

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Mfr.Part #
TK58E06N1,S1X
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 60V 58A TO220
Stock
10,682
In Stock :
10,682

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Temperature :
150°C TJ
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
3400pF @ 30V
Series :
U-MOSVIII-H
Mount :
Through Hole
Power Dissipation-Max :
110W Tc
Published :
2014
Factory Lead Time :
12 Weeks
Current - Continuous Drain (Id) @ 25°C :
58A Ta
Mounting Type :
Through Hole
Drive Voltage (Max Rds On,Min Rds On) :
10V
Gate Charge (Qg) (Max) @ Vgs :
46nC @ 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs(th) (Max) @ Id :
4V @ 500μA
Rds On (Max) @ Id, Vgs :
5.4m Ω @ 29A, 10V
Packaging :
Tube
Continuous Drain Current (ID) :
58A
RoHS Status :
RoHS Compliant
Drain to Source Voltage (Vdss) :
60V
Package / Case :
TO-220-3
FET Type :
N-Channel
Datasheets
TK58E06N1,S1X
Introducing Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK58E06N1,S1X from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Mounting Type:Through Hole, Package / Case:TO-220-3, TK58E06N1,S1X pinout, TK58E06N1,S1X datasheet PDF, TK58E06N1,S1X amp .Beyond Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK58E06N1,S1X ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation TK58E06N1,S1X


N-Channel Tube 5.4m Ω @ 29A, 10V ±20V 3400pF @ 30V 46nC @ 10V 60V TO-220-3

TK58E06N1,S1X Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 3400pF @ 30V.This device has a continuous drain current (ID) of [58A], which is its maximum continuous current.In order to operate this transistor, a voltage of 60V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

TK58E06N1,S1X Features


a continuous drain current (ID) of 58A
a 60V drain to source voltage (Vdss)


TK58E06N1,S1X Applications


There are a lot of Toshiba Semiconductor and Storage
TK58E06N1,S1X applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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