TK58A06N1,S4X
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- Mfr.Part #
- TK58A06N1,S4X
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 58A TO220SIS
- Stock
- 4
- In Stock ：
- 4
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 5.4m Ω @ 29A, 10V
- RoHS Status :
- RoHS Compliant
- Vgs(th) (Max) @ Id :
- 4V @ 500μA
- Series :
- U-MOSVIII-H
- Published :
- 2014
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Radiation Hardening :
- No
- Operating Mode :
- ENHANCEMENT MODE
- Rise Time :
- 11ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3400pF @ 30V
- Drain to Source Breakdown Voltage :
- 60V
- Element Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 46nC @ 10V
- Weight :
- 6.000006g
- Turn On Delay Time :
- 33 ns
- Package / Case :
- TO-220-3 Full Pack
- Factory Lead Time :
- 12 Weeks
- Power Dissipation-Max :
- 35W Tc
- Turn-Off Delay Time :
- 56 ns
- Fall Time (Typ) :
- 17 ns
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C TJ
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Pins :
- 3
- Number of Channels :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 58A Tc
- Vgs (Max) :
- ±20V
- Continuous Drain Current (ID) :
- 58A
- Datasheets
- TK58A06N1,S4X
N-Channel Tube 5.4m Ω @ 29A, 10V ±20V 3400pF @ 30V 46nC @ 10V TO-220-3 Full Pack
TK58A06N1,S4X Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3400pF @ 30V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 60V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 60V.As a result of its turn-off delay time, which is 56 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 33 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (10V).
TK58A06N1,S4X Features
a continuous drain current (ID) of 58A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 56 ns
TK58A06N1,S4X Applications
There are a lot of Toshiba Semiconductor and Storage
TK58A06N1,S4X applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| TK58E06N1,S1X | Toshiba Electronic Devices and Storage Corporation | 10,682 | MOSFET N-CH 60V 58A TO220 |
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