TK40S06N1L,LQ

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Product Category :

MOSFET

Mounting Style :

SMD/SMT

Manufacturer :

Toshiba

Power Dissipation (Max) :

88.2W (Tc)

Subcategory :

MOSFETs

Drain to Source Voltage (Vdss) :

60 V

Configuration :

Single

Package :

Tape and Reel (TR)

Supplier Device Package :

DPAK+

Gate Charge (Qg) (Max) @ Vgs :

26 nC @ 10 V

Rds On (Max) @ Id, Vgs :

10.5mOhm @ 20A, 10V

FET Feature :

-

Minimum Operating Temperature :

- 55 C

Qualification :

AEC-Q101

Tradename :

U-MOSVIII-H

Series :

U-MOSVIII-H

Product Type :

MOSFET

Input Capacitance (Ciss) (Max) @ Vds :

1650 pF @ 10 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Transistor Polarity :

N-Channel

RoHS :

Details

Rise Time :

7 ns

Transistor Type :

1 N-Channel

Brand :

Toshiba

Operating Temperature :

175°C

Vgs(th) (Max) @ Id :

2.5V @ 200μA

Packaging :

MouseReel

FET Type :

N-Channel

Channel Mode :

Enhancement

Current - Continuous Drain (Id) @ 25°C :

40A (Ta)

Product Status :

Active

Vgs (Max) :

±20V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Channels :

1 Channel

Base Product Number :

TK40S06

Maximum Operating Temperature :

+ 175 C

Mounting Type :

Surface Mount