TK40P04M1(T6RSS-Q)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Turn On Delay Time :

27 ns

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

6.1mm

RoHS Status :

RoHS Compliant

Transistor Element Material :

SILICON

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Fall Time (Typ) :

18 ns

Continuous Drain Current (ID) :

40A

Series :

U-MOSVI-H

Power Dissipation-Max :

47W Tc

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

1920pF @ 10V

Operating Temperature :

150°C TJ

Length :

10mm

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

11m Ω @ 20A, 10V

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

40V

Number of Elements :

1

Height :

2.3mm

Rise Time :

20ns

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

Turn-Off Delay Time :

63 ns

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

40A Ta

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Number of Channels :

1

Published :

2009

Factory Lead Time :

12 Weeks

Vgs(th) (Max) @ Id :

2.3V @ 200μA

Mount :

Surface Mount, Through Hole

Mounting Type :

Surface Mount

Power Dissipation :

47W

Case Connection :

DRAIN

Number of Pins :

3