TK40P04M1(T6RSS-Q)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

U-MOSVI-H

Element Configuration :

Single

Drain to Source Breakdown Voltage :

40V

FET Type :

N-Channel

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

47W Tc

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

RoHS Status :

RoHS Compliant

Vgs (Max) :

±20V

Length :

10mm

Operating Temperature :

150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Rise Time :

20ns

Mount :

Surface Mount, Through Hole

Continuous Drain Current (ID) :

40A

Turn-Off Delay Time :

63 ns

Width :

6.1mm

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

27 ns

Factory Lead Time :

12 Weeks

Height :

2.3mm

Rds On (Max) @ Id, Vgs :

11m Ω @ 20A, 10V

Vgs(th) (Max) @ Id :

2.3V @ 200μA

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Power Dissipation :

47W

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

1920pF @ 10V

JESD-30 Code :

R-PSSO-G2

Published :

2009

Terminal Form :

Gull wing

Fall Time (Typ) :

18 ns

Number of Channels :

1

Number of Pins :

3

Number of Terminations :

2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

40A Ta