TK34E10N1,S1X

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Mfr.Part #
TK34E10N1,S1X
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 100V 75A TO220
Stock
1
In Stock :
1

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - FETs, MOSFETs - Single
Continuous Drain Current (ID) :
75A
Drain to Source Voltage (Vdss) :
100V
Factory Lead Time :
12 Weeks
Gate Charge (Qg) (Max) @ Vgs :
38nC @ 10V
Package / Case :
TO-220-3
Input Capacitance (Ciss) (Max) @ Vds :
2600pF @ 50V
Power Dissipation-Max :
103W Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Type :
N-Channel
Rds On (Max) @ Id, Vgs :
9.5m Ω @ 17A, 10V
RoHS Status :
RoHS Compliant
Operating Temperature :
150°C TJ
Published :
2014
Series :
U-MOSVIII-H
Vgs(th) (Max) @ Id :
4V @ 500μA
Drive Voltage (Max Rds On,Min Rds On) :
10V
Packaging :
Tube
Mount :
Through Hole
Mounting Type :
Through Hole
Vgs (Max) :
±20V
Current - Continuous Drain (Id) @ 25°C :
75A Tc
Datasheets
TK34E10N1,S1X
Introducing Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK34E10N1,S1X from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Operating Temperature:150°C TJ, Mounting Type:Through Hole, TK34E10N1,S1X pinout, TK34E10N1,S1X datasheet PDF, TK34E10N1,S1X amp .Beyond Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK34E10N1,S1X ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation TK34E10N1,S1X


N-Channel Tube 9.5m Ω @ 17A, 10V ±20V 2600pF @ 50V 38nC @ 10V 100V TO-220-3

TK34E10N1,S1X Overview


A device's maximum input capacitance is 2600pF @ 50V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 75A for this device. Drain current refers to the capacity of the device to conduct continuous current.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

TK34E10N1,S1X Features


a continuous drain current (ID) of 75A
a 100V drain to source voltage (Vdss)


TK34E10N1,S1X Applications


There are a lot of Toshiba Semiconductor and Storage
TK34E10N1,S1X applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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