TK34A10N1,S4X

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

U-MOSVIII-H

Package / Case :

TO-220-3 Full Pack

Published :

2014

Case Connection :

Isolated

Number of Pins :

3

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

JEDEC-95 Code :

TO-220AB

Number of Terminations :

3

Element Configuration :

Single

Number of Channels :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

2600pF @ 50V

Vgs(th) (Max) @ Id :

4V @ 500μA

Packaging :

Tube

Operating Temperature :

150°C TJ

Gate to Source Voltage (Vgs) :

20V

Drain-source On Resistance-Max :

0.0095Ohm

Rds On (Max) @ Id, Vgs :

9.5m Ω @ 17A, 10V

Avalanche Energy Rating (Eas) :

64 mJ

Mount :

Through Hole

Factory Lead Time :

12 Weeks

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

34A

Current - Continuous Drain (Id) @ 25°C :

34A Tc

Drain Current-Max (Abs) (ID) :

75A

Fall Time (Typ) :

18 ns

Weight :

6.000006g

RoHS Status :

RoHS Compliant

Pbfree Code :

yes

Mounting Type :

Through Hole

Turn-Off Delay Time :

50 ns

Power Dissipation-Max :

35W Tc

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Drain to Source Voltage (Vdss) :

100V

Rise Time :

12ns

Turn On Delay Time :

31 ns

Radiation Hardening :

No

Vgs (Max) :

±20V

Transistor Application :

SWITCHING