TK32E12N1,S1X
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- Mfr.Part #
- TK32E12N1,S1X
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N CH 120V 60A TO-220
- Stock
- 11,609
- In Stock ：
- 11,609
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- 150°C TJ
- Series :
- U-MOSVIII-H
- Vgs (Max) :
- ±20V
- Element Configuration :
- Single
- Power Dissipation :
- 98W
- Gate to Source Voltage (Vgs) :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Fall Time (Typ) :
- 14 ns
- Packaging :
- Tube
- Rise Time :
- 14ns
- Gate Charge (Qg) (Max) @ Vgs :
- 34nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2000pF @ 60V
- Mounting Type :
- Through Hole
- RoHS Status :
- RoHS Compliant
- Published :
- 2014
- Current - Continuous Drain (Id) @ 25°C :
- 60A Tc
- Drain to Source Breakdown Voltage :
- 120V
- Package / Case :
- TO-220-3
- Power Dissipation-Max :
- 98W Tc
- Factory Lead Time :
- 12 Weeks
- Vgs(th) (Max) @ Id :
- 4V @ 500μA
- Rds On (Max) @ Id, Vgs :
- 13.8m Ω @ 16A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Type :
- N-Channel
- Turn-Off Delay Time :
- 43 ns
- Continuous Drain Current (ID) :
- 60A
- Datasheets
- TK32E12N1,S1X
N-Channel Tube 13.8m Ω @ 16A, 10V ±20V 2000pF @ 60V 34nC @ 10V TO-220-3
TK32E12N1,S1X Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2000pF @ 60V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 60A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=120V. And this device has 120V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 43 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (10V), this device helps reduce its overall power consumption.
TK32E12N1,S1X Features
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 120V voltage
the turn-off delay time is 43 ns
TK32E12N1,S1X Applications
There are a lot of Toshiba Semiconductor and Storage
TK32E12N1,S1X applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| TK32A12N1,S4X | Toshiba Electronic Devices and Storage Corporation | 3 | MOSFET N-CH 120V 32A TO220SIS |
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