TK32A12N1,S4X

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Supplier Device Package :

TO-220SIS

Number of Channels :

1

Vgs(th) (Max) @ Id :

4V @ 500μA

Rise Time :

14ns

Continuous Drain Current (ID) :

32A

Input Capacitance :

2nF

Operating Temperature :

150°C TJ

Weight :

6.000006g

Min Operating Temperature :

-55°C

Input Capacitance (Ciss) (Max) @ Vds :

2000pF @ 60V

Gate to Source Voltage (Vgs) :

20V

Published :

2014

Drain to Source Resistance :

11mOhm

Current - Continuous Drain (Id) @ 25°C :

32A Tc

Series :

U-MOSVIII-H

Rds On (Max) @ Id, Vgs :

13.8mOhm @ 16A, 10V

Factory Lead Time :

12 Weeks

Radiation Hardening :

No

Fall Time (Typ) :

14 ns

Turn-Off Delay Time :

43 ns

Rds On Max :

13.8 mΩ

Mounting Type :

Through Hole

Element Configuration :

Single

Power Dissipation-Max :

30W Tc

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

RoHS Compliant

FET Type :

N-Channel

Max Operating Temperature :

150°C

Package / Case :

TO-220-3 Full Pack

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

33 ns

Drain to Source Voltage (Vdss) :

120V

Mount :

Through Hole

Number of Pins :

3