TK2P60D(TE16L1,NV)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Height - Seated (Max) :

0.022 (0.55mm)

Gate Charge (Qg) (Max) @ Vgs :

7 nC @ 10 V

Vgs(th) (Max) @ Id :

4.4V @ 1mA

Power Dissipation :

60

Channel Type :

N

Composition :

Thin Film

Features :

Automotive AEC-Q200, Moisture Resistant

Technology :

MOSFET (Metal Oxide)

Tolerance :

±0.1%

Size / Dimension :

0.063 L x 0.031 W (1.60mm x 0.80mm)

Ratings :

AEC-Q200

Resistance :

1.21 kOhms

Base Product Number :

RN73R1J

Input Capacitance (Ciss) (Max) @ Vds :

280 pF @ 25 V

Product Status :

Active

Power (Watts) :

0.1W, 1/10W

Vgs (Max) :

±30V

Drive Voltage (Max Rds On, Min Rds On) :

10V

Package / Case :

0603 (1608 Metric)

Operating Temperature :

-55°C ~ 155°C

Series :

RN73R

FET Feature :

-

Number of Terminations :

2

Rds On (Max) @ Id, Vgs :

4.3Ohm @ 1A, 10V

Package :

Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;

Supplier Device Package :

0603

Power Dissipation (Max) :

60W (Tc)

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

600 V

Temperature Coefficient :

±10ppm/°C

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

2A (Ta)

Failure Rate :

-

Continuous Drain Current Id :

2