TK2P60D(TE16L1,NQ)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance :

280pF

RoHS Status :

RoHS Compliant

Height :

2.3mm

Rds On Max :

4.3 Ω

FET Type :

N-Channel

Mounting Type :

Surface Mount

Width :

5.5mm

Mount :

Surface Mount

Turn-Off Delay Time :

55 ns

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 10V

Number of Elements :

1

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Fall Time (Typ) :

7 ns

Rds On (Max) @ Id, Vgs :

4.3Ohm @ 1A, 10V

Number of Pins :

3

Max Operating Temperature :

150°C

Input Capacitance (Ciss) (Max) @ Vds :

280pF @ 25V

Turn On Delay Time :

35 ns

Vgs (Max) :

±30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

π-MOSVII

Gate to Source Voltage (Vgs) :

30V

Power Dissipation-Max :

60W Tc

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Length :

6.5mm

Published :

2009

Supplier Device Package :

PW-MOLD

Operating Temperature :

150°C TJ

Continuous Drain Current (ID) :

2A

Vgs(th) (Max) @ Id :

4.4V @ 1mA

Rise Time :

15ns

Current - Continuous Drain (Id) @ 25°C :

2A Ta

Factory Lead Time :

18 Weeks

Power Dissipation :

60W

Radiation Hardening :

No

Drain to Source Voltage (Vdss) :

600V

Min Operating Temperature :

-55°C