TK28N65W,S1F

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Mfr.Part #
TK28N65W,S1F
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 650V 27.6A TO247
Stock
7,242
In Stock :
7,242

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation-Max :
230W Tc
Rds On (Max) @ Id, Vgs :
110mOhm @ 13.8A, 10V
Mounting Type :
Through Hole
RoHS Status :
RoHS Compliant
Vgs(th) (Max) @ Id :
3.5V @ 1.6mA
Input Capacitance (Ciss) (Max) @ Vds :
3000pF @ 300V
Continuous Drain Current (ID) :
27.6A
Vgs (Max) :
±30V
Current - Continuous Drain (Id) @ 25°C :
27.6A Ta
Drain to Source Voltage (Vdss) :
650V
Packaging :
Tube
Rds On Max :
110 mΩ
Factory Lead Time :
16 Weeks
Supplier Device Package :
TO-247
Mount :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drive Voltage (Max Rds On,Min Rds On) :
10V
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
75nC @ 10V
Published :
2014
Package / Case :
TO-247-3
Series :
DTMOSIV
Operating Temperature :
150°C TJ
Input Capacitance :
3nF
Datasheets
TK28N65W,S1F
Introducing Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK28N65W,S1F from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-247-3, Operating Temperature:150°C TJ, TK28N65W,S1F pinout, TK28N65W,S1F datasheet PDF, TK28N65W,S1F amp .Beyond Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK28N65W,S1F ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation TK28N65W,S1F


N-Channel Tube 110mOhm @ 13.8A, 10V ±30V 3000pF @ 300V 75nC @ 10V 650V TO-247-3

TK28N65W,S1F Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3000pF @ 300V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 27.6A continuous drain current (ID).For this transistor to work, a voltage 650V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

TK28N65W,S1F Features


a continuous drain current (ID) of 27.6A
a 650V drain to source voltage (Vdss)


TK28N65W,S1F Applications


There are a lot of Toshiba Semiconductor and Storage
TK28N65W,S1F applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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