TK28E65W,S1X

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Mfr.Part #
TK28E65W,S1X
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
TO-220-3
Datasheet
Download
Description
PB-F POWER MOSFET TRANSISTOR TO-
Stock
10,420
In Stock :
10,420

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - FETs, MOSFETs - Single
Drain to Source Voltage (Vdss) :
650 V
Rise Time :
25 ns
Mounting Type :
Through Hole
Rds On (Max) @ Id, Vgs :
110mOhm @ 13.8A, 10V
Channel Mode :
Enhancement
Drive Voltage (Max Rds On, Min Rds On) :
10V
Power Dissipation (Max) :
230W (Tc)
Maximum Operating Temperature :
+ 150 C
Supplier Device Package :
TO-220
Transistor Polarity :
N-Channel
Vgs (Max) :
±30V
Mounting Style :
Through Hole
Product Category :
MOSFET
Gate Charge (Qg) (Max) @ Vgs :
75 nC @ 10 V
Series :
DTMOSIV
Input Capacitance (Ciss) (Max) @ Vds :
3000 pF @ 300 V
Manufacturer :
Toshiba
Number of Channels :
1 Channel
Tradename :
DTMOSIV
Product Status :
Active
Brand :
Toshiba
FET Type :
N-Channel
RoHS :
Details
Configuration :
Single
Subcategory :
MOSFETs
Package :
Tube
Operating Temperature :
150°C
Package / Case :
TO-220-3
FET Feature :
-
Minimum Operating Temperature :
- 55 C
Product Type :
MOSFET
Packaging :
Tube
Current - Continuous Drain (Id) @ 25°C :
27.6A (Ta)
Transistor Type :
1 N-Channel
Vgs(th) (Max) @ Id :
3.5V @ 1.6mA
Datasheets
TK28E65W,S1X
Introducing Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK28E65W,S1X from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Channels:1 Channel, Operating Temperature:150°C, Package / Case:TO-220-3, TK28E65W,S1X pinout, TK28E65W,S1X datasheet PDF, TK28E65W,S1X amp .Beyond Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK28E65W,S1X ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Tube 110mOhm @ 13.8A, 10V ±30V 3000 pF @ 300 V 75 nC @ 10 V 650 V TO-220-3

TK28E65W,S1X Overview


A device's maximum input capacitance is 3000 pF @ 300 V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.To operate this transistor, you need to apply a 650 V drain to source voltage (Vdss).

TK28E65W,S1X Features


a 650 V drain to source voltage (Vdss)


TK28E65W,S1X Applications


There are a lot of Toshiba Semiconductor and Storage
TK28E65W,S1X applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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