TK28E65W,S1X

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Mfr.Part #
TK28E65W,S1X
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
TO-220-3
Datasheet
Download
Description
PB-F POWER MOSFET TRANSISTOR TO-
Stock
10,420
In Stock :
10,420

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Channels :
1 Channel
Rise Time :
25 ns
Drain to Source Voltage (Vdss) :
650 V
Product Category :
MOSFET
RoHS :
Details
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
3000 pF @ 300 V
Maximum Operating Temperature :
+ 150 C
FET Feature :
-
Current - Continuous Drain (Id) @ 25°C :
27.6A (Ta)
Package / Case :
TO-220-3
Tradename :
DTMOSIV
Series :
DTMOSIV
Operating Temperature :
150°C
Mounting Style :
Through Hole
FET Type :
N-Channel
Rds On (Max) @ Id, Vgs :
110mOhm @ 13.8A, 10V
Brand :
Toshiba
Transistor Type :
1 N-Channel
Drive Voltage (Max Rds On, Min Rds On) :
10V
Product Status :
Active
Gate Charge (Qg) (Max) @ Vgs :
75 nC @ 10 V
Channel Mode :
Enhancement
Power Dissipation (Max) :
230W (Tc)
Manufacturer :
Toshiba
Minimum Operating Temperature :
- 55 C
Supplier Device Package :
TO-220
Package :
Tube
Transistor Polarity :
N-Channel
Product Type :
MOSFET
Subcategory :
MOSFETs
Vgs(th) (Max) @ Id :
3.5V @ 1.6mA
Configuration :
Single
Packaging :
Tube
Mounting Type :
Through Hole
Datasheets
TK28E65W,S1X
Introducing Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK28E65W,S1X from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Package / Case:TO-220-3, Operating Temperature:150°C, Mounting Type:Through Hole, TK28E65W,S1X pinout, TK28E65W,S1X datasheet PDF, TK28E65W,S1X amp .Beyond Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK28E65W,S1X ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Tube 110mOhm @ 13.8A, 10V ±30V 3000 pF @ 300 V 75 nC @ 10 V 650 V TO-220-3

TK28E65W,S1X Overview


A device's maximum input capacitance is 3000 pF @ 300 V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.To operate this transistor, you need to apply a 650 V drain to source voltage (Vdss).

TK28E65W,S1X Features


a 650 V drain to source voltage (Vdss)


TK28E65W,S1X Applications


There are a lot of Toshiba Semiconductor and Storage
TK28E65W,S1X applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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