TK28E65W,S1X

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Mfr.Part #
TK28E65W,S1X
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
TO-220-3
Datasheet
Download
Description
PB-F POWER MOSFET TRANSISTOR TO-
Stock
10,420
In Stock :
10,420

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Temperature :
150°C
Manufacturer :
Toshiba
Mounting Style :
Through Hole
Supplier Device Package :
TO-220
Package / Case :
TO-220-3
Input Capacitance (Ciss) (Max) @ Vds :
3000 pF @ 300 V
Package :
Tube
Product Type :
MOSFET
RoHS :
Details
Vgs(th) (Max) @ Id :
3.5V @ 1.6mA
Product Category :
MOSFET
Rise Time :
25 ns
Current - Continuous Drain (Id) @ 25°C :
27.6A (Ta)
Mounting Type :
Through Hole
Power Dissipation (Max) :
230W (Tc)
Minimum Operating Temperature :
- 55 C
Number of Channels :
1 Channel
Series :
DTMOSIV
Maximum Operating Temperature :
+ 150 C
Drain to Source Voltage (Vdss) :
650 V
Brand :
Toshiba
Channel Mode :
Enhancement
Tradename :
DTMOSIV
Transistor Polarity :
N-Channel
FET Feature :
-
Packaging :
Tube
Subcategory :
MOSFETs
Vgs (Max) :
±30V
Gate Charge (Qg) (Max) @ Vgs :
75 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Type :
N-Channel
Configuration :
Single
Transistor Type :
1 N-Channel
Rds On (Max) @ Id, Vgs :
110mOhm @ 13.8A, 10V
Product Status :
Active
Datasheets
TK28E65W,S1X
Introducing Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK28E65W,S1X from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C, Package / Case:TO-220-3, Mounting Type:Through Hole, Number of Channels:1 Channel, TK28E65W,S1X pinout, TK28E65W,S1X datasheet PDF, TK28E65W,S1X amp .Beyond Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK28E65W,S1X ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Tube 110mOhm @ 13.8A, 10V ±30V 3000 pF @ 300 V 75 nC @ 10 V 650 V TO-220-3

TK28E65W,S1X Overview


A device's maximum input capacitance is 3000 pF @ 300 V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.To operate this transistor, you need to apply a 650 V drain to source voltage (Vdss).

TK28E65W,S1X Features


a 650 V drain to source voltage (Vdss)


TK28E65W,S1X Applications


There are a lot of Toshiba Semiconductor and Storage
TK28E65W,S1X applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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