TK22E10N1,S1X

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Mfr.Part #
TK22E10N1,S1X
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N CH 100V 52A TO220
Stock
135,754
In Stock :
135,754

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Temperature :
150°C TJ
Package / Case :
TO-220-3
Input Capacitance (Ciss) (Max) @ Vds :
1800pF @ 50V
Continuous Drain Current (ID) :
52A
Vgs(th) (Max) @ Id :
4V @ 300μA
Mounting Type :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Voltage (Vdss) :
100V
Published :
2010
Rds On (Max) @ Id, Vgs :
13.8m Ω @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C :
52A Tc
Vgs (Max) :
±20V
Mount :
Through Hole
Packaging :
Tube
Factory Lead Time :
12 Weeks
RoHS Status :
RoHS Compliant
Series :
U-MOSVIII-H
Power Dissipation-Max :
72W Tc
Gate Charge (Qg) (Max) @ Vgs :
28nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) :
10V
FET Type :
N-Channel
Datasheets
TK22E10N1,S1X
Introducing Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK22E10N1,S1X from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Package / Case:TO-220-3, Mounting Type:Through Hole, TK22E10N1,S1X pinout, TK22E10N1,S1X datasheet PDF, TK22E10N1,S1X amp .Beyond Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK22E10N1,S1X ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation TK22E10N1,S1X


N-Channel Tube 13.8m Ω @ 11A, 10V ±20V 1800pF @ 50V 28nC @ 10V 100V TO-220-3

TK22E10N1,S1X Overview


The maximum input capacitance of this device is 1800pF @ 50V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 52A.The drain-to-source voltage (Vdss) of this transistor needs to be at 100V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

TK22E10N1,S1X Features


a continuous drain current (ID) of 52A
a 100V drain to source voltage (Vdss)


TK22E10N1,S1X Applications


There are a lot of Toshiba Semiconductor and Storage
TK22E10N1,S1X applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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