TK18A30D,S5X

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Product Type :

MOSFET

Input Capacitance (Ciss) (Max) @ Vds :

2600 pF @ 100 V

Gate Charge (Qg) (Max) @ Vgs :

60 nC @ 10 V

FET Feature :

-

Supplier Device Package :

TO-220SIS

Vgs(th) (Max) @ Id :

3.5V @ 1mA

Series :

-

Configuration :

Single

Operating Temperature :

150°C

Number of Channels :

1 Channel

Mounting Style :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

18A (Ta)

Package / Case :

TO-220-3 Full Pack

Rise Time :

70 ns

Brand :

Toshiba

Tradename :

MOSVII

Transistor Type :

1 N-Channel

Subcategory :

MOSFETs

Product Category :

MOSFET

Channel Mode :

Enhancement

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

139mOhm @ 9A, 10V

Packaging :

Tube

Package :

Tube

Mounting Type :

Through Hole

Product Status :

Active

Minimum Operating Temperature :

- 55 C

Drive Voltage (Max Rds On, Min Rds On) :

10V

Power Dissipation (Max) :

45W (Tc)

Manufacturer :

Toshiba

Maximum Operating Temperature :

+ 150 C

Drain to Source Voltage (Vdss) :

300 V

RoHS :

Details

Transistor Polarity :

N-Channel