TK18A30D,S5X

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

3.5V @ 1mA

Transistor Polarity :

N-Channel

Vgs (Max) :

±20V

Packaging :

Tube

FET Feature :

-

Gate Charge (Qg) (Max) @ Vgs :

60 nC @ 10 V

Current - Continuous Drain (Id) @ 25°C :

18A (Ta)

Brand :

Toshiba

Input Capacitance (Ciss) (Max) @ Vds :

2600 pF @ 100 V

Channel Mode :

Enhancement

Mounting Style :

Through Hole

Rise Time :

70 ns

Minimum Operating Temperature :

- 55 C

RoHS :

Details

Maximum Operating Temperature :

+ 150 C

Product Category :

MOSFET

Series :

-

Number of Channels :

1 Channel

Configuration :

Single

FET Type :

N-Channel

Package / Case :

TO-220-3 Full Pack

Transistor Type :

1 N-Channel

Drive Voltage (Max Rds On, Min Rds On) :

10V

Subcategory :

MOSFETs

Supplier Device Package :

TO-220SIS

Tradename :

MOSVII

Power Dissipation (Max) :

45W (Tc)

Product Type :

MOSFET

Rds On (Max) @ Id, Vgs :

139mOhm @ 9A, 10V

Drain to Source Voltage (Vdss) :

300 V

Manufacturer :

Toshiba

Operating Temperature :

150°C

Product Status :

Active

Mounting Type :

Through Hole

Package :

Tube