TIS97_J35Z

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Mfr.Part #
TIS97_J35Z
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Datasheet
Download
Description
TRANS NPN 40V 0.5A TO92-3
Stock
5,639
In Stock :
5,639

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Current - Collector Cutoff (Max) :
10nA ICBO
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Mounting Type :
Through Hole
Power - Max :
625mW
Supplier Device Package :
TO-92-3
Packaging :
Bulk
Operating Temperature :
-55°C~150°C TJ
DC Current Gain (hFE) (Min) @ Ic, Vce :
250 @ 100μA 5V
Base Part Number :
TIS97
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Collector (Ic) (Max) :
500mA
Voltage - Collector Emitter Breakdown (Max) :
40V
Transistor Type :
NPN
Datasheets
TIS97_J35Z
Introducing Transistors - Bipolar (BJT) - Single onsemi TIS97_J35Z from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Base Part Number:TIS97, TIS97_J35Z pinout, TIS97_J35Z datasheet PDF, TIS97_J35Z amp .Beyond Transistors - Bipolar (BJT) - Single onsemi TIS97_J35Z ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi TIS97_J35Z


NPN -55°C~150°C TJ 10nA ICBO TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Bulk Through Hole

TIS97_J35Z Overview


DC current gain in this device equals 250 @ 100μA 5V, which is the ratio of the base current to the collector current.Product comes in TO-92-3 supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

TIS97_J35Z Features


the DC current gain for this device is 250 @ 100μA 5V
the supplier device package of TO-92-3


TIS97_J35Z Applications


There are a lot of ON Semiconductor
TIS97_J35Z applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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