TIP35CG
- Mfr.Part #
- TIP35CG
- Manufacturer
- onsemi
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- TRANS NPN 100V 25A TO247-3
- Stock
- 9
- In Stock :
- 9
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Current - Collector Cutoff (Max) :
- 1mA
- Max Collector Current :
- 25A
- hFE Min :
- 25
- Lead Free :
- Lead Free
- Frequency :
- 3MHz
- Terminal Finish :
- Tin (Sn)
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 100V
- Weight :
- 4.535924g
- Vce Saturation (Max) @ Ib, Ic :
- 4V @ 5A, 25A
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 15A 4V
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 125W
- Number of Terminations :
- 3
- Length :
- 15.2146mm
- Transistor Application :
- SWITCHING
- REACH SVHC :
- No SVHC
- Package / Case :
- TO-247-3
- Number of Elements :
- 1
- Height :
- 20.3454mm
- Transistor Type :
- NPN
- Pin Count :
- 3
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 5V
- Surface Mount :
- No
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Voltage (VCEO) :
- 100V
- Collector Emitter Saturation Voltage :
- 1.8V
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Factory Lead Time :
- 4 Weeks
- Operating Temperature :
- -65°C~150°C TJ
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 100V
- Case Connection :
- COLLECTOR
- Transition Frequency :
- 3MHz
- Width :
- 4.9022mm
- Power Dissipation :
- 125W
- Published :
- 2002
- Current Rating :
- 25A
- Gain Bandwidth Product :
- 3MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Voltage - Rated DC :
- 100V
- Datasheets
- TIP35CG

NPN -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON NPN TO-247-3 Tube Through Hole
TIP35CG Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 15 @ 15A 4V.The collector emitter saturation voltage is 1.8V, which allows for maximum design flexibility.When VCE saturation is 4V @ 5A, 25A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 25A.In the part, the transition frequency is 3MHz.A maximum collector current of 25A volts can be achieved.
TIP35CG Features
the DC current gain for this device is 15 @ 15A 4V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 4V @ 5A, 25A
the emitter base voltage is kept at 5V
the current rating of this device is 25A
a transition frequency of 3MHz
TIP35CG Applications
There are a lot of ON Semiconductor
TIP35CG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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