TIP32CTU
- Mfr.Part #
- TIP32CTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 100V 3A TO220-3
- Stock
- 42,893
- In Stock :
- 42,893
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- hFE Min :
- 25
- Factory Lead Time :
- 15 Weeks
- Max Collector Current :
- 3A
- Power Dissipation :
- 2W
- Lead Free :
- Lead Free
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- -1.2V
- Max Power Dissipation :
- 2W
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency :
- 3MHz
- Transition Frequency :
- 3MHz
- Collector Emitter Breakdown Voltage :
- 100V
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Package / Case :
- TO-220-3
- Mount :
- Through Hole
- Published :
- 2004
- Gain Bandwidth Product :
- 3MHz
- Contact Plating :
- Tin
- Voltage :
- 100V
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 375mA, 3A
- Radiation Hardening :
- No
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Transistor Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 3A 4V
- Base Part Number :
- TIP32
- Current :
- 3A
- Packaging :
- Tube
- JEDEC-95 Code :
- TO-220AB
- ECCN Code :
- EAR99
- Length :
- 10.67mm
- Voltage - Rated DC :
- -100V
- Element Configuration :
- Single
- Width :
- 4.83mm
- Number of Terminations :
- 3
- Polarity/Channel Type :
- PNP
- RoHS Status :
- RoHS Compliant
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 100V
- Height :
- 16.51mm
- Collector Emitter Voltage (VCEO) :
- 100V
- Weight :
- 1.214012g
- Current - Collector Cutoff (Max) :
- 200μA
- Current Rating :
- -3A
- Transistor Element Material :
- SILICON
- Datasheets
- TIP32CTU

PNP 150°C TJ 200μA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
TIP32CTU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10 @ 3A 4V.The collector emitter saturation voltage is -1.2V, which allows for maximum design flexibility.When VCE saturation is 1.2V @ 375mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -3A.In the part, the transition frequency is 3MHz.A maximum collector current of 3A volts can be achieved.
TIP32CTU Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of -1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 3MHz
TIP32CTU Applications
There are a lot of ON Semiconductor
TIP32CTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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