TIP32CTU
- Mfr.Part #
- TIP32CTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 100V 3A TO220-3
- Stock
- 42,893
- In Stock :
- 42,893
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Base Part Number :
- TIP32
- Voltage :
- 100V
- Collector Emitter Saturation Voltage :
- -1.2V
- Emitter Base Voltage (VEBO) :
- 5V
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 2W
- JESD-609 Code :
- e3
- Weight :
- 1.214012g
- Packaging :
- Tube
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Contact Plating :
- Tin
- Polarity/Channel Type :
- PNP
- Pbfree Code :
- yes
- Current :
- 3A
- Transistor Application :
- SWITCHING
- Voltage - Rated DC :
- -100V
- Transistor Type :
- PNP
- Gain Bandwidth Product :
- 3MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 100V
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 3A 4V
- Current Rating :
- -3A
- Published :
- 2004
- Operating Temperature :
- 150°C TJ
- Length :
- 10.67mm
- Width :
- 4.83mm
- RoHS Status :
- RoHS Compliant
- Collector Emitter Voltage (VCEO) :
- 100V
- Factory Lead Time :
- 15 Weeks
- Max Collector Current :
- 3A
- Current - Collector Cutoff (Max) :
- 200μA
- Transition Frequency :
- 3MHz
- Mount :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 375mA, 3A
- Number of Terminations :
- 3
- JEDEC-95 Code :
- TO-220AB
- hFE Min :
- 25
- Power Dissipation :
- 2W
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 100V
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Frequency :
- 3MHz
- Radiation Hardening :
- No
- Package / Case :
- TO-220-3
- Height :
- 16.51mm
- Datasheets
- TIP32CTU

PNP 150°C TJ 200μA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
TIP32CTU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10 @ 3A 4V.The collector emitter saturation voltage is -1.2V, which allows for maximum design flexibility.When VCE saturation is 1.2V @ 375mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -3A.In the part, the transition frequency is 3MHz.A maximum collector current of 3A volts can be achieved.
TIP32CTU Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of -1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 3MHz
TIP32CTU Applications
There are a lot of ON Semiconductor
TIP32CTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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