TIP32ATU
- Mfr.Part #
- TIP32ATU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 3A TO220-3
- Stock
- 17,607
- In Stock :
- 17,607
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 3A 4V
- Voltage - Rated DC :
- -60V
- Collector Emitter Saturation Voltage :
- -1.2V
- Published :
- 2004
- Transition Frequency :
- 3MHz
- Frequency :
- 3MHz
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 375mA, 3A
- RoHS Status :
- ROHS3 Compliant
- Length :
- 10.67mm
- JEDEC-95 Code :
- TO-220AB
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Package / Case :
- TO-220-3
- Weight :
- 1.214g
- Max Power Dissipation :
- 2W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 200μA
- Factory Lead Time :
- 2 Weeks
- Number of Elements :
- 1
- Width :
- 4.83mm
- Gain Bandwidth Product :
- 3MHz
- Power Dissipation :
- 2W
- Terminal Finish :
- Tin (Sn)
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Polarity/Channel Type :
- PNP
- Transistor Type :
- PNP
- Mounting Type :
- Through Hole
- Collector Base Voltage (VCBO) :
- -60V
- Mount :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 60V
- Emitter Base Voltage (VEBO) :
- -5V
- Operating Temperature :
- 150°C TJ
- Max Collector Current :
- 3A
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Base Part Number :
- TIP32
- hFE Min :
- 10
- Lead Free :
- Lead Free
- Height :
- 16.51mm
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Packaging :
- Tube
- Current Rating :
- -3A
- Collector Emitter Breakdown Voltage :
- 60V
- Datasheets
- TIP32ATU

PNP 150°C TJ 200μA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
TIP32ATU Overview
In this device, the DC current gain is 10 @ 3A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -1.2V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.2V @ 375mA, 3A.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-3A).3MHz is present in the transition frequency.Maximum collector currents can be below 3A volts.
TIP32ATU Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of -1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at -5V
the current rating of this device is -3A
a transition frequency of 3MHz
TIP32ATU Applications
There are a lot of ON Semiconductor
TIP32ATU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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