TIP32
- Mfr.Part #
- TIP32
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 40V 3A TO220-3
- Stock
- 7,031
- In Stock :
- 7,031
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Frequency :
- 3MHz
- Current Rating :
- 1.4A
- Element Configuration :
- Single
- Max Collector Current :
- 3A
- Pin Count :
- 3
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 40V
- Mounting Type :
- Through Hole
- Collector Emitter Saturation Voltage :
- 1.2V
- Factory Lead Time :
- 2 Weeks
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Published :
- 2000
- Transistor Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 40V
- Emitter Base Voltage (VEBO) :
- 5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 3A 4V
- Base Part Number :
- TIP32
- Package / Case :
- TO-220-3
- ECCN Code :
- EAR99
- JEDEC-95 Code :
- TO-220AB
- Radiation Hardening :
- No
- Gain Bandwidth Product :
- 3MHz
- Polarity/Channel Type :
- PNP
- Number of Terminations :
- 3
- Operating Temperature :
- -65°C~150°C TJ
- Transition Frequency :
- 3MHz
- Power Dissipation :
- 2W
- Surface Mount :
- No
- Packaging :
- Tube
- Case Connection :
- COLLECTOR
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Voltage - Rated DC :
- -40V
- Terminal Finish :
- Tin (Sn)
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 375mA, 3A
- Collector Emitter Voltage (VCEO) :
- 40V
- Max Power Dissipation :
- 2W
- hFE Min :
- 25
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 300μA
- Datasheets
- TIP32

PNP -65°C~150°C TJ 300μA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
TIP32G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 10 @ 3A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.2V @ 375mA, 3A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 1.4A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 3MHz.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.
TIP32G Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 1.4A
a transition frequency of 3MHz
TIP32G Applications
There are a lot of ON Semiconductor
TIP32G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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