TIP31G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 3A 4V

Number of Terminations :

3

Frequency :

3MHz

Pbfree Code :

yes

Max Power Dissipation :

2W

Radiation Hardening :

No

Height :

15.748mm

Collector Emitter Breakdown Voltage :

40V

Case Connection :

COLLECTOR

Collector Base Voltage (VCBO) :

40V

Factory Lead Time :

2 Weeks

Number of Elements :

1

Emitter Base Voltage (VEBO) :

5V

Width :

4.826mm

Collector Emitter Saturation Voltage :

1.2V

Packaging :

Tube

Vce Saturation (Max) @ Ib, Ic :

1.2V @ 375mA, 3A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Collector Emitter Voltage (VCEO) :

40V

Time@Peak Reflow Temperature-Max (s) :

40

hFE Min :

25

Transistor Application :

SWITCHING

Published :

2005

RoHS Status :

ROHS3 Compliant

Base Part Number :

TIP31

Lead Free :

Lead Free

ECCN Code :

EAR99

Length :

10.2616mm

Number of Pins :

3

Transition Frequency :

3MHz

Max Collector Current :

3A

Transistor Element Material :

SILICON

Current Rating :

3A

JEDEC-95 Code :

TO-220AB

Operating Temperature :

-65°C~150°C TJ

Surface Mount :

No

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Through Hole

Transistor Type :

NPN

Polarity/Channel Type :

NPN

Weight :

4.535924g

Element Configuration :

Single

Package / Case :

TO-220-3

Gain Bandwidth Product :

3MHz

Power Dissipation :

2W

Voltage - Rated DC :

40V

Pin Count :

3

Current - Collector Cutoff (Max) :

300μA

Terminal Finish :

Tin (Sn)