TIP31CTU
- Mfr.Part #
- TIP31CTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 100V 3A TO220-3
- Stock
- 577
- In Stock :
- 577
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency :
- 3MHz
- Power Dissipation :
- 2W
- REACH SVHC :
- No SVHC
- RoHS Status :
- RoHS Compliant
- JESD-609 Code :
- e3
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Max Collector Current :
- 3A
- JEDEC-95 Code :
- TO-220AB
- Package / Case :
- TO-220-3
- Gain Bandwidth Product :
- 3MHz
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Published :
- 2013
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 100V
- Number of Elements :
- 1
- Base Part Number :
- TIP31
- Collector Emitter Breakdown Voltage :
- 100V
- Mount :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 5V
- ECCN Code :
- EAR99
- Factory Lead Time :
- 6 Weeks
- Terminal Finish :
- Tin (Sn)
- Weight :
- 1.214g
- Pbfree Code :
- yes
- Packaging :
- Tube
- Transition Frequency :
- 3MHz
- Width :
- 6.35mm
- Current - Collector Cutoff (Max) :
- 300μA
- Max Breakdown Voltage :
- 100V
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 100V
- hFE Min :
- 10
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 375mA, 3A
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 100V
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 3A 4V
- Length :
- 6.35mm
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Height :
- 6.35mm
- Current Rating :
- 3A
- Max Power Dissipation :
- 2W
- Mounting Type :
- Through Hole
- Datasheets
- TIP31CTU

NPN 150°C TJ 300μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
TIP31CTU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 10 @ 3A 4V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.2V @ 375mA, 3A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 3A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 3MHz.The breakdown input voltage is 100V volts.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.
TIP31CTU Features
the DC current gain for this device is 10 @ 3A 4V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz
TIP31CTU Applications
There are a lot of ON Semiconductor
TIP31CTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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