TIP31BG
- Mfr.Part #
- TIP31BG
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 3A TO220
- Stock
- 31,016
- In Stock :
- 31,016
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Tin (Sn)
- Factory Lead Time :
- 2 Weeks
- Transition Frequency :
- 3MHz
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 375mA, 3A
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Length :
- 10.2616mm
- Number of Pins :
- 3
- Weight :
- 4.535924g
- Frequency :
- 3MHz
- Gain Bandwidth Product :
- 3MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- REACH SVHC :
- No SVHC
- Mounting Type :
- Through Hole
- Case Connection :
- COLLECTOR
- Max Collector Current :
- 3A
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 80V
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Packaging :
- Tube
- Peak Reflow Temperature (Cel) :
- 260
- hFE Min :
- 25
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Operating Temperature :
- -65°C~150°C TJ
- Voltage - Rated DC :
- 80V
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Max Power Dissipation :
- 40W
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 1.2V
- Current - Collector Cutoff (Max) :
- 300μA
- Published :
- 2001
- Base Part Number :
- TIP31
- Power Dissipation :
- 2W
- Height :
- 15.748mm
- Emitter Base Voltage (VEBO) :
- 5V
- Package / Case :
- TO-220-3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 3A 4V
- Collector Base Voltage (VCBO) :
- 80V
- Current Rating :
- 3A
- Width :
- 4.826mm
- Surface Mount :
- No
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- NPN
- JEDEC-95 Code :
- TO-220AB
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 80V
- Datasheets
- TIP31BG

NPN -65°C~150°C TJ 300μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
TIP31BG Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10 @ 3A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.2V @ 375mA, 3A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 3A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 3MHz.During maximum operation, collector current can be as low as 3A volts.
TIP31BG Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz
TIP31BG Applications
There are a lot of ON Semiconductor
TIP31BG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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