TIP31AG
- Mfr.Part #
- TIP31AG
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 3A TO220
- Stock
- 45
- In Stock :
- 45
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 3A
- Operating Temperature :
- -65°C~150°C TJ
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Element Configuration :
- Single
- Voltage - Rated DC :
- 60V
- Peak Reflow Temperature (Cel) :
- 260
- Width :
- 4.82mm
- Case Connection :
- COLLECTOR
- Transistor Type :
- NPN
- REACH SVHC :
- No SVHC
- Height :
- 15.748mm
- Emitter Base Voltage (VEBO) :
- 5V
- Published :
- 2006
- Surface Mount :
- No
- Factory Lead Time :
- 2 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 375mA, 3A
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Weight :
- 45.359237kg
- Time@Peak Reflow Temperature-Max (s) :
- 40
- hFE Min :
- 25
- Current - Collector Cutoff (Max) :
- 300μA
- Collector Emitter Saturation Voltage :
- 1.2V
- Packaging :
- Tube
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Length :
- 10.28mm
- Power Dissipation :
- 2W
- Collector Base Voltage (VCBO) :
- 60V
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 60V
- Base Part Number :
- TIP31
- Frequency :
- 3MHz
- Transition Frequency :
- 3MHz
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 40W
- Package / Case :
- TO-220-3
- Collector Emitter Breakdown Voltage :
- 60V
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 3A 4V
- Terminal Finish :
- Tin (Sn)
- Gain Bandwidth Product :
- 3MHz
- Current Rating :
- 3A
- Pbfree Code :
- yes
- JEDEC-95 Code :
- TO-220AB
- Radiation Hardening :
- No
- Datasheets
- TIP31AG

NPN -65°C~150°C TJ 300μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
The TIP31AG is a medium-power NPN bipolar junction transistor that is commonly used. TIP31AG transistor is a three-terminal bipolar junction transistor (BJT) that can be used for amplification or switching. TIP31AG is made up of three parts of semiconductors, each with a different doping pattern. The base is thin, and the emitter and collector are extensively doped on the exterior.
TIP31AG Features
High current gain - bandwidth
60VDC Minimum collector-emitter sustaining voltage (VCEO (sus))
1.2VDC Maximum collector-emitter saturation voltage (VCE (sat))
60VDC Collector to base voltage (VCBO)
5VDC Emitter to base voltage (VEBO)
5ADC Peak collector current
1ADC Base current (IB)
3.125°C/W Thermal resistance, junction to case
62.5°C/W Thermal resistance, junction to ambient
TIP31AG Applications
Industrial
Speed control of Motors
Half-bridge circuits
high current switching (up to 2A) loads
Can be used as medium Power switches
Large signal amplification
Inverter and other rectifier circuits
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