TIP30CTU
- Mfr.Part #
- TIP30CTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 100V 1A TO220-3
- Stock
- 2,256
- In Stock :
- 2,256
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 100V
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 125mA, 1A
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Collector Emitter Saturation Voltage :
- -700mV
- Packaging :
- Tube
- Factory Lead Time :
- 36 Weeks
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 100V
- Length :
- 10.67mm
- Max Power Dissipation :
- 2W
- JEDEC-95 Code :
- TO-220AB
- Max Collector Current :
- 1A
- Collector Emitter Breakdown Voltage :
- 100V
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 300μA
- Pbfree Code :
- yes
- Polarity/Channel Type :
- PNP
- Terminal Finish :
- Tin (Sn)
- hFE Min :
- 15
- JESD-609 Code :
- e3
- Height :
- 16.51mm
- Package / Case :
- TO-220-3
- Emitter Base Voltage (VEBO) :
- 5V
- Weight :
- 1.214012g
- Frequency :
- 3MHz
- Current Rating :
- -1A
- Gain Bandwidth Product :
- 3MHz
- Transition Frequency :
- 3MHz
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Base Part Number :
- TIP30
- Transistor Type :
- PNP
- Voltage :
- 100V
- Lead Free :
- Lead Free
- Width :
- 4.83mm
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 100V
- Number of Pins :
- 3
- Voltage - Rated DC :
- -100V
- Mount :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 1A 4V
- RoHS Status :
- RoHS Compliant
- Radiation Hardening :
- No
- Power Dissipation :
- 2W
- Published :
- 2004
- Number of Terminations :
- 3
- Current :
- 1A
- Operating Temperature :
- 150°C TJ
- Datasheets
- TIP30CTU

PNP 150°C TJ 300μA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
TIP30CTU Overview
In this device, the DC current gain is 15 @ 1A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -700mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 125mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-1A).3MHz is present in the transition frequency.An input voltage of 100V volts is the breakdown voltage.Maximum collector currents can be below 1A volts.
TIP30CTU Features
the DC current gain for this device is 15 @ 1A 4V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 125mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 3MHz
TIP30CTU Applications
There are a lot of ON Semiconductor
TIP30CTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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