TIP30C
- Mfr.Part #
- TIP30C
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 100V 1A TO220-3
- Stock
- 23,856
- In Stock :
- 23,856
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- Frequency :
- 3MHz
- Power Dissipation :
- 2W
- Collector Emitter Voltage (VCEO) :
- 100V
- Peak Reflow Temperature (Cel) :
- 260
- Polarity/Channel Type :
- PNP
- Voltage - Rated DC :
- -100V
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 125mA, 1A
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Number of Terminations :
- 3
- hFE Min :
- 40
- Weight :
- 4.535924g
- Factory Lead Time :
- 8 Weeks
- Collector Emitter Saturation Voltage :
- 700mV
- Mounting Type :
- Through Hole
- Height :
- 15.748mm
- Current Rating :
- -1A
- Emitter Base Voltage (VEBO) :
- 5V
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Package / Case :
- TO-220-3
- Max Power Dissipation :
- 2W
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 3MHz
- Surface Mount :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 300μA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JESD-609 Code :
- e3
- Max Collector Current :
- 1A
- Element Configuration :
- Single
- Case Connection :
- COLLECTOR
- Base Part Number :
- TIP30
- Transistor Type :
- PNP
- JEDEC-95 Code :
- TO-220AB
- Width :
- 4.82mm
- RoHS Status :
- ROHS3 Compliant
- Length :
- 10.28mm
- Transition Frequency :
- 3MHz
- Collector Emitter Breakdown Voltage :
- 100V
- Number of Elements :
- 1
- Pin Count :
- 3
- Published :
- 2005
- REACH SVHC :
- No SVHC
- Lead Free :
- Lead Free
- Contact Plating :
- Tin
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 1A 4V
- Packaging :
- Tube
- Collector Base Voltage (VCBO) :
- 100V
- Operating Temperature :
- -65°C~150°C TJ
- Datasheets
- TIP30C

PNP -65°C~150°C TJ 300μA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
TIP30CG Overview
In this device, the DC current gain is 15 @ 1A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 700mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 125mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-1A).3MHz is present in the transition frequency.Maximum collector currents can be below 1A volts.
TIP30CG Features
the DC current gain for this device is 15 @ 1A 4V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 125mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 3MHz
TIP30CG Applications
There are a lot of ON Semiconductor
TIP30CG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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