TIP30C
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- Mfr.Part #
- TIP30C
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 100V 1A TO220-3
- Stock
- 47,278
- In Stock ：
- 47,278
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 100V
- Current - Collector Cutoff (Max) :
- 300μA
- Gain Bandwidth Product :
- 3MHz
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 100V
- Mounting Type :
- Through Hole
- Max Collector Current :
- 1A
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 125mA, 1A
- Published :
- 2005
- Power Dissipation :
- 2W
- Emitter Base Voltage (VEBO) :
- 5V
- hFE Min :
- 40
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Width :
- 4.82mm
- Number of Pins :
- 3
- Voltage - Rated DC :
- -100V
- Transition Frequency :
- 3MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 1A 4V
- Operating Temperature :
- -65°C~150°C TJ
- Frequency :
- 3MHz
- Transistor Type :
- PNP
- Collector Emitter Saturation Voltage :
- 700mV
- Pbfree Code :
- yes
- Surface Mount :
- No
- Packaging :
- Tube
- Max Power Dissipation :
- 2W
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Polarity/Channel Type :
- PNP
- JEDEC-95 Code :
- TO-220AB
- Height :
- 15.748mm
- Current Rating :
- -1A
- Length :
- 10.28mm
- Weight :
- 4.535924g
- Number of Elements :
- 1
- Case Connection :
- COLLECTOR
- Element Configuration :
- Single
- Contact Plating :
- Tin
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Base Voltage (VCBO) :
- 100V
- Factory Lead Time :
- 8 Weeks
- Package / Case :
- TO-220-3
- Base Part Number :
- TIP30
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Datasheets
- TIP30C
PNP -65°C~150°C TJ 300μA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
TIP30CG Overview
In this device, the DC current gain is 15 @ 1A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 700mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 125mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-1A).3MHz is present in the transition frequency.Maximum collector currents can be below 1A volts.
TIP30CG Features
the DC current gain for this device is 15 @ 1A 4V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 125mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 3MHz
TIP30CG Applications
There are a lot of ON Semiconductor
TIP30CG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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