TC7920K6-G

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Mfr.Part #
TC7920K6-G
Manufacturer
Microchip Technology
Package / Case
12-VFDFN Exposed Pad
Datasheet
Download
Description
MOSFET 2N/2P-CH 200V 12VDFN
Stock
1,418
In Stock :
1,418

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Arrays
Number of Elements :
4
Turn On Delay Time :
10 ns
Terminal Form :
NO LEAD
Product Category :
MOSFET
Power - Max :
-
Drain-source On Resistance-Max :
7Ohm
Terminal Position :
Dual
RoHS Status :
ROHS3 Compliant
Supplier Device Package :
12-DFN (4x4)
Contact Plating :
Tin
Transistor Application :
SWITCHING
Input Capacitance (Ciss) (Max) @ Vds :
52pF @ 25V
Subcategory :
MOSFETs
Packaging :
Tape and Reel (TR)
Transistor Polarity :
N-Channel, P-Channel
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Operating Temperature :
-55°C~150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Manufacturer :
Microchip
Additional Feature :
LOGIC LEVEL COMPATIBLE, LOW THRESHOLD
Package / Case :
12-VFDFN Exposed Pad
ECCN Code :
EAR99
Brand :
Microchip Technology
FET Type :
2 N and 2 P-Channel
Peak Reflow Temperature (Cel) :
260
JESD-609 Code :
e4
Rds On (Max) @ Id, Vgs :
10 Ω @ 1A, 10V
Technology :
Si
Transistor Element Material :
SILICON
Maximum Operating Temperature :
+ 150 C
Turn-Off Delay Time :
20 ns
Factory Lead Time :
14 Weeks
Number of Terminations :
12
Number of Channels :
4 Channel
Number of Pins :
12
Current - Continuous Drain (Id) @ 25°C :
-
Operating Mode :
ENHANCEMENT MODE
Mounting Type :
Surface Mount
FET Feature :
Standard
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Published :
2004
Product :
MOSFET Small Signal
Rise Time :
15ns
Polarity/Channel Type :
N-CHANNEL AND P-CHANNEL
Product Status :
Active
Fall Time (Typ) :
15 ns
Configuration :
SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Transistor Type :
2 N-Channel, 2 P-Channel
Gate Charge (Qg) (Max) @ Vgs :
-
Channel Mode :
Enhancement
RoHS :
Details
Vgs(th) (Max) @ Id :
2.4V @ 1mA
Base Product Number :
TC7920
Lead Free :
Lead Free
DS Breakdown Voltage-Min :
200V
Time@Peak Reflow Temperature-Max (s) :
40
Mount :
Surface Mount
Product Type :
MOSFET
Drain to Source Voltage (Vdss) :
200V
Terminal Finish :
Nickel/Palladium/Gold (Ni/Pd/Au)
Series :
-
Channel Type :
Dual N/P
Package :
Tape and Reel (TR)
Qualification Status :
Not Qualified
Introducing Transistors - FETs, MOSFETs - Arrays Microchip Technology TC7920K6-G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:12-VFDFN Exposed Pad, Number of Terminations:12, Number of Channels:4 Channel, Number of Pins:12, Mounting Type:Surface Mount, TC7920K6-G pinout, TC7920K6-G datasheet PDF, TC7920K6-G amp .Beyond Transistors - FETs, MOSFETs - Arrays Microchip Technology TC7920K6-G ,we also offer SSM6N57NU,LF, DMN2004DMK-7, AO4629, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TC7920K6-G


TC7920K6-G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Microchip Technology stock available at

TC7920K6-G                         Description

The TC7920 consists of two pairs of high-voltage, low-threshold N-channel and P-channel MOSFETs in a 12-Lead DFN package. All MOSFETs have integrated the output drain high-voltage diodes, gate-to-source resistors, and gate-to-source Zener diode clamps which are desired for high-voltage pulser applications. The complimentary, high-speed, high-voltage, gate-clamped N-channel and P-channel MOSFET pairs utilize an advanced vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient

inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown. 


TC7920K6-G                         Features

• High-Voltage Vertical DMOS Technology

• Integrated Drain Output High-Voltage Diodes

• Integrated Gate-to-Source Resistor

• Integrated Gate-to-Source Zener Diode

• Low Threshold, Low On-Resistance

• Low Input and Output Capacitance

• Fast Switching Speeds

• Electrically Isolated N-channel and P-channel

MOSFET Pairs


TC7920K6-G                         Applications

• High-Voltage Pulsers

• Amplifiers

• Buffers

• Piezoelectric Transducer Drivers

• General Purpose Line Drivers

• Logic-Level Interfaces




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