TC7920K6-G
- Mfr.Part #
- TC7920K6-G
- Manufacturer
- Microchip Technology
- Package / Case
- 12-VFDFN Exposed Pad
- Datasheet
- Download
- Description
- MOSFET 2N/2P-CH 200V 12VDFN
- Stock
- 1,418
- In Stock :
- 1,418
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- RoHS :
- Details
- DS Breakdown Voltage-Min :
- 200V
- Drain-source On Resistance-Max :
- 7Ohm
- Number of Pins :
- 12
- Series :
- -
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Base Product Number :
- TC7920
- FET Type :
- 2 N and 2 P-Channel
- Current - Continuous Drain (Id) @ 25°C :
- -
- Rise Time :
- 15ns
- Vgs(th) (Max) @ Id :
- 2.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs :
- -
- Manufacturer :
- Microchip
- Brand :
- Microchip Technology
- FET Feature :
- Standard
- Qualification Status :
- Not Qualified
- Product Category :
- MOSFET
- Subcategory :
- MOSFETs
- Configuration :
- SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
- Polarity/Channel Type :
- N-CHANNEL AND P-CHANNEL
- Product :
- MOSFET Small Signal
- Packaging :
- Tape and Reel (TR)
- Operating Mode :
- ENHANCEMENT MODE
- JESD-609 Code :
- e4
- Product Type :
- MOSFET
- Turn-Off Delay Time :
- 20 ns
- Drain to Source Voltage (Vdss) :
- 200V
- Technology :
- Si
- Supplier Device Package :
- 12-DFN (4x4)
- Product Status :
- Active
- Transistor Polarity :
- N-Channel, P-Channel
- Number of Terminations :
- 12
- Maximum Operating Temperature :
- + 150 C
- Additional Feature :
- LOGIC LEVEL COMPATIBLE, LOW THRESHOLD
- Package / Case :
- 12-VFDFN Exposed Pad
- Channel Type :
- Dual N/P
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Elements :
- 4
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 14 Weeks
- Number of Channels :
- 4 Channel
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Surface Mount
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 15 ns
- Channel Mode :
- Enhancement
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Position :
- Dual
- ECCN Code :
- EAR99
- Contact Plating :
- Tin
- Turn On Delay Time :
- 10 ns
- Power - Max :
- -
- Package :
- Tape and Reel (TR)
- Mounting Style :
- SMD/SMT
- Rds On (Max) @ Id, Vgs :
- 10 Ω @ 1A, 10V
- Terminal Form :
- NO LEAD
- Minimum Operating Temperature :
- - 55 C
- Published :
- 2004
- Input Capacitance (Ciss) (Max) @ Vds :
- 52pF @ 25V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- 2 N-Channel, 2 P-Channel
- Datasheets
- TC7920K6-G

TC7920K6-G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Microchip Technology stock available at
TC7920K6-G Description
The TC7920 consists of two pairs of high-voltage, low-threshold N-channel and P-channel MOSFETs in a 12-Lead DFN package. All MOSFETs have integrated the output drain high-voltage diodes, gate-to-source resistors, and gate-to-source Zener diode clamps which are desired for high-voltage pulser applications. The complimentary, high-speed, high-voltage, gate-clamped N-channel and P-channel MOSFET pairs utilize an advanced vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown.
TC7920K6-G Features
• High-Voltage Vertical DMOS Technology
• Integrated Drain Output High-Voltage Diodes
• Integrated Gate-to-Source Resistor
• Integrated Gate-to-Source Zener Diode
• Low Threshold, Low On-Resistance
• Low Input and Output Capacitance
• Fast Switching Speeds
• Electrically Isolated N-channel and P-channel
MOSFET Pairs
TC7920K6-G Applications
• High-Voltage Pulsers
• Amplifiers
• Buffers
• Piezoelectric Transducer Drivers
• General Purpose Line Drivers
• Logic-Level Interfaces
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