TC7920K6-G

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Mfr.Part #
TC7920K6-G
Manufacturer
Microchip Technology
Package / Case
12-VFDFN Exposed Pad
Datasheet
Download
Description
MOSFET 2N/2P-CH 200V 12VDFN
Stock
1,418
In Stock :
1,418

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Arrays
RoHS :
Details
DS Breakdown Voltage-Min :
200V
Drain-source On Resistance-Max :
7Ohm
Number of Pins :
12
Series :
-
Transistor Application :
SWITCHING
Mounting Type :
Surface Mount
Terminal Finish :
Nickel/Palladium/Gold (Ni/Pd/Au)
Base Product Number :
TC7920
FET Type :
2 N and 2 P-Channel
Current - Continuous Drain (Id) @ 25°C :
-
Rise Time :
15ns
Vgs(th) (Max) @ Id :
2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
-
Manufacturer :
Microchip
Brand :
Microchip Technology
FET Feature :
Standard
Qualification Status :
Not Qualified
Product Category :
MOSFET
Subcategory :
MOSFETs
Configuration :
SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Polarity/Channel Type :
N-CHANNEL AND P-CHANNEL
Product :
MOSFET Small Signal
Packaging :
Tape and Reel (TR)
Operating Mode :
ENHANCEMENT MODE
JESD-609 Code :
e4
Product Type :
MOSFET
Turn-Off Delay Time :
20 ns
Drain to Source Voltage (Vdss) :
200V
Technology :
Si
Supplier Device Package :
12-DFN (4x4)
Product Status :
Active
Transistor Polarity :
N-Channel, P-Channel
Number of Terminations :
12
Maximum Operating Temperature :
+ 150 C
Additional Feature :
LOGIC LEVEL COMPATIBLE, LOW THRESHOLD
Package / Case :
12-VFDFN Exposed Pad
Channel Type :
Dual N/P
Time@Peak Reflow Temperature-Max (s) :
40
Number of Elements :
4
Transistor Element Material :
SILICON
Factory Lead Time :
14 Weeks
Number of Channels :
4 Channel
Operating Temperature :
-55°C~150°C TJ
Mount :
Surface Mount
Lead Free :
Lead Free
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Fall Time (Typ) :
15 ns
Channel Mode :
Enhancement
Peak Reflow Temperature (Cel) :
260
Terminal Position :
Dual
ECCN Code :
EAR99
Contact Plating :
Tin
Turn On Delay Time :
10 ns
Power - Max :
-
Package :
Tape and Reel (TR)
Mounting Style :
SMD/SMT
Rds On (Max) @ Id, Vgs :
10 Ω @ 1A, 10V
Terminal Form :
NO LEAD
Minimum Operating Temperature :
- 55 C
Published :
2004
Input Capacitance (Ciss) (Max) @ Vds :
52pF @ 25V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
RoHS Status :
ROHS3 Compliant
Transistor Type :
2 N-Channel, 2 P-Channel
Datasheets
TC7920K6-G
Introducing Transistors - FETs, MOSFETs - Arrays Microchip Technology TC7920K6-G from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:12, Mounting Type:Surface Mount, Number of Terminations:12, Package / Case:12-VFDFN Exposed Pad, Number of Channels:4 Channel, Operating Temperature:-55°C~150°C TJ, TC7920K6-G pinout, TC7920K6-G datasheet PDF, TC7920K6-G amp .Beyond Transistors - FETs, MOSFETs - Arrays Microchip Technology TC7920K6-G ,we also offer SSM6N57NU,LF, DMN2004DMK-7, AO4629, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TC7920K6-G


TC7920K6-G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Microchip Technology stock available at

TC7920K6-G                         Description

The TC7920 consists of two pairs of high-voltage, low-threshold N-channel and P-channel MOSFETs in a 12-Lead DFN package. All MOSFETs have integrated the output drain high-voltage diodes, gate-to-source resistors, and gate-to-source Zener diode clamps which are desired for high-voltage pulser applications. The complimentary, high-speed, high-voltage, gate-clamped N-channel and P-channel MOSFET pairs utilize an advanced vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient

inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown. 


TC7920K6-G                         Features

• High-Voltage Vertical DMOS Technology

• Integrated Drain Output High-Voltage Diodes

• Integrated Gate-to-Source Resistor

• Integrated Gate-to-Source Zener Diode

• Low Threshold, Low On-Resistance

• Low Input and Output Capacitance

• Fast Switching Speeds

• Electrically Isolated N-channel and P-channel

MOSFET Pairs


TC7920K6-G                         Applications

• High-Voltage Pulsers

• Amplifiers

• Buffers

• Piezoelectric Transducer Drivers

• General Purpose Line Drivers

• Logic-Level Interfaces




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