TC6320TG-G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Base Part Number :

TC6320

Rds On (Max) @ Id, Vgs :

7 Ω @ 1A, 10V

Height :

1.65mm

Configuration :

Dual

Maximum Operating Temperature :

+ 150 C

Length :

4.9mm

Fall Time (Typ) :

15 ns

Number of Elements :

2

Peak Reflow Temperature (Cel) :

260

Width :

3.9mm

Minimum Operating Temperature :

- 55 C

Channel Type :

Dual N/P

Number of Pins :

8

Product Category :

MOSFET

JESD-609 Code :

e3

Manufacturer :

Microchip

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

200V

Gate Charge (Qg) (Max) @ Vgs :

--

Technology :

Si

Power - Max :

--

Vgs(th) (Max) @ Id :

2V @ 1mA

Transistor Polarity :

Complementary N and P Channel

Package / Case :

8-SOIC (0.154, 3.90mm Width)

REACH SVHC :

No SVHC

Product Type :

MOSFET

Product :

MOSFET Small Signal

Contact Plating :

Tin

MSL :

MSL 3 - 168 hours

Rise Time :

15ns

Threshold Voltage :

2V

Continuous Drain Current (ID) :

-2A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

8

Radiation Hardening :

No

Series :

--

Product Status :

Active

Published :

2010

Turn-Off Delay Time :

20 ns

Mounting Style :

SMD/SMT

Base Product Number :

TC6320

Mounting Type :

Surface Mount

Continuous Drain Current Id :

-

Factory Lead Time :

6 Weeks

FET Feature :

Standard

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Package :

Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;

RoHS :

Details

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

--

Supplier Device Package :

8-SOIC

Transistor Element Material :

SILICON

Weight :

84.99187mg

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Time@Peak Reflow Temperature-Max (s) :

40

Drain to Source Voltage (Vdss) :

200V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

SWITCHING

Brand :

Microchip Technology / Atmel

Mount :

Surface Mount

Turn On Delay Time :

10 ns

Terminal Position :

Dual

Number of Channels :

2

FET Type :

N and P-Channel

Channel Mode :

Enhancement

Transistor Type :

1 N-Channel, 1 P-Channel

Input Capacitance (Ciss) (Max) @ Vds :

110pF @ 25V

Drain-source On Resistance-Max :

7Ohm

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Qualification :

-