TB100EP

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Mfr.Part #
TB100EP
Manufacturer
WeEn Semiconductors Co., Ltd
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
TRANS NPN 700V 1A TO92-3
Stock
7,592
In Stock :
7,592

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Manufacturer :
WeEn Semiconductors Co., Ltd
Product Category :
Transistors - Bipolar (BJT) - Single
Current - Collector (Ic) (Max) :
1A
Power - Max :
2W
Voltage - Collector Emitter Breakdown (Max) :
700V
Current - Collector Cutoff (Max) :
100μA
Operating Temperature :
150°C
Packaging :
Tape and Box (TB)
Mounting Type :
Through Hole
DC Current Gain (hFE) (Min) @ Ic, Vce :
14 @ 100mA 5V
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Transistor Type :
NPN
Vce Saturation (Max) @ Ib, Ic :
1V @ 150mA, 750mA
ECCN Code :
EAR99
Datasheets
TB100EP
Introducing Transistors - Bipolar (BJT) - Single WeEn Semiconductors Co., Ltd TB100EP from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C, Mounting Type:Through Hole, Package / Case:TO-226-3, TO-92-3 (TO-226AA), TB100EP pinout, TB100EP datasheet PDF, TB100EP amp .Beyond Transistors - Bipolar (BJT) - Single WeEn Semiconductors Co., Ltd TB100EP ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



NPN 150°C 100μA TO-226-3, TO-92-3 (TO-226AA) Tape & Box (TB) Through Hole

TB100EP Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 14 @ 100mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 150mA, 750mA.A 700V maximal voltage - Collector Emitter Breakdown is present in the device.

TB100EP Features


the DC current gain for this device is 14 @ 100mA 5V
the vce saturation(Max) is 1V @ 150mA, 750mA


TB100EP Applications


There are a lot of WeEn Semiconductors
TB100EP applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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