SVD5865NLT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Pbfree Code :

yes

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 2 days ago)

Pulsed Drain Current-Max (IDM) :

203A

Reference Standard :

AEC-Q101

DS Breakdown Voltage-Min :

60V

Number of Terminations :

2

Drain to Source Resistance :

13mOhm

JESD-609 Code :

e3

Number of Elements :

1

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

30

Avalanche Energy Rating (Eas) :

36 mJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

RoHS Status :

RoHS Compliant

Polarity/Channel Type :

N-Channel

Operating Temperature (Min) :

-55°C

Surface Mount :

yes

Terminal Position :

Single