SVD5806NT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Reference Standard :

AEC-Q101

Terminal Form :

Gull wing

Terminal Position :

Single

Operating Temperature (Max) :

175°C

Terminal Finish :

Tin (Sn)

Number of Terminations :

2

Pulsed Drain Current-Max (IDM) :

67A

Surface Mount :

yes

Operating Temperature (Min) :

-55°C

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Power Dissipation :

40

Polarity/Channel Type :

N-Channel

JESD-609 Code :

e3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain-source On Resistance-Max :

0.019Ohm

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 1 week ago)

DS Breakdown Voltage-Min :

40V

JESD-30 Code :

R-PSSO-G2

Continuous Drain Current Id :

33

Avalanche Energy Rating (Eas) :

39 mJ

Transistor Element Material :

SILICON

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

RoHS Compliant

Drain Current-Max (Abs) (ID) :

33A

Pbfree Code :

yes

Case Connection :

DRAIN