SUP50N03-5M1P-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Turn-Off Delay Time :

35 ns

JEDEC-95 Code :

TO-220AB

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Avalanche Energy Rating (Eas) :

80 mJ

Turn On Delay Time :

8 ns

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

66nC @ 10V

Threshold Voltage :

1V

Pin Count :

3

Fall Time (Typ) :

9 ns

Rise Time :

9ns

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Series :

TrenchFET®

JESD-609 Code :

e3

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

2780pF @ 15V

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Application :

SWITCHING

Terminal Finish :

Matte Tin (Sn)

Continuous Drain Current (ID) :

50A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

6.000006g

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Rds On (Max) @ Id, Vgs :

5.1m Ω @ 22A, 10V

Power Dissipation :

2.7W

Drain to Source Voltage (Vdss) :

30V

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±20V

Number of Terminations :

3

Mounting Type :

Through Hole

Number of Channels :

1

Packaging :

Bulk

Package / Case :

TO-220-3

Published :

2008

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Power Dissipation-Max :

2.7W Ta 59.5W Tc

Operating Mode :

ENHANCEMENT MODE