SUP50020EL-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Through Hole

Terminal Position :

Single

Series :

TrenchFET®

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-220-3

Gate Charge (Qg) (Max) @ Vgs :

126nC @ 10V

Drain-source On Resistance-Max :

0.0023Ohm

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Terminations :

3

Continuous Drain Current (ID) :

120A

Factory Lead Time :

14 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

375W Tc

Packaging :

Bulk

Mount :

Through Hole

JEDEC-95 Code :

TO-220AB

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

300A

Avalanche Energy Rating (Eas) :

281 mJ

JESD-30 Code :

R-PSFM-T3

DS Breakdown Voltage-Min :

60V

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Drain to Source Voltage (Vdss) :

60V

Input Capacitance (Ciss) (Max) @ Vds :

11113pF @ 30V

Transistor Element Material :

SILICON

Published :

2017

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

2.3m Ω @ 30A, 10V

Vgs (Max) :

±20V