SUM85N15-19-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

4750pF @ 25V

Vgs(th) (Max) @ Id :

4V @ 250µA

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

TrenchFET®

Nominal Vgs :

2 V

Mount :

Surface Mount

Power Dissipation :

3.75W

Packaging :

Cut Tape (CT)

Number of Pins :

3

Max Junction Temperature (Tj) :

175°C

Operating Temperature :

-55°C~175°C TJ

Height :

4.826mm

Weight :

1.437803g

Fall Time (Typ) :

170 ns

Current - Continuous Drain (Id) @ 25°C :

85A Tc

Threshold Voltage :

2V

Width :

9.65mm

Continuous Drain Current (ID) :

85A

Length :

10.41mm

Mounting Type :

Surface Mount

Turn-Off Delay Time :

40 ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Dual Supply Voltage :

150V

Termination :

SMD/SMT

REACH SVHC :

Unknown

Power Dissipation-Max :

3.75W Ta 375W Tc

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

FET Type :

N-Channel

Current :

85A

Voltage :

150V

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Resistance :

19mOhm

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

150V

Rise Time :

170ns

Turn On Delay Time :

22 ns

Terminal Form :

Gull wing

Published :

2009

Factory Lead Time :

14 Weeks

ECCN Code :

EAR99

Number of Channels :

1

Element Configuration :

Single

Number of Terminations :

2

Pin Count :

4

Pbfree Code :

yes

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Reverse Recovery Time :

130 ns

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

19m Ω @ 30A, 10V

Terminal Finish :

Matte Tin (Sn) - annealed